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Found: 2830      Displaying: 1941 - 1960
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
1941.
NTE5572Silicon controlled rectiifier for phase control applications. Repetitive peak voltage, Vrrm = 600V. Non - repetitive peak reverse blocking voltage, Vrsm = 900V. RMS on-state current, Itrms = 125A.
NTE
-
4
-40°C
125°C
21K
1942.
NTE5575Silicon controlled rectiifier. Repetitive peak forward blocking voltage, Vdrm = 200V. Repetitive peak reverse voltage, Vrrm = 200V. RMS on-state current Itrms = 125A.
NTE
-
3
-40°C
125°C
19K
1943.
NTE5576Silicon controlled rectiifier. Repetitive peak voltage, Vdrm,Vrrm = 600V. RMS on-state current Itrms = 175A.
NTE
-
4
-40°C
125°C
21K
1944.
NTE5577Silicon controlled rectiifier. Repetitive peak forward blocking voltage, Vdrm = 600V. Repetitive peak reverse voltage, Vrrm = 600V. RMS on-state current Itrms = 125A.
NTE
-
3
-40°C
125°C
19K
1945.
NTE5578Silicon controlled rectiifier. Repetitive peak voltage, Vdrm,Vrrm = 1600V. RMS on-state current Itrms = 175A.
NTE
-
4
-40°C
125°C
21K
1946.
NTE5579Silicon controlled rectiifier. Repetitive peak forward blocking voltage, Vdrm = 1200V. Repetitive peak reverse voltage, Vrrm = 1200V. RMS on-state current Itrms = 125A.
NTE
-
3
-40°C
125°C
19K
1947.
NTE558General purpose silicon rectifier. Peak repetitive reverse voltage 1500V. Average rectified forward current 1A.
NTE
DO41
2
-65°C
175°C
17K
1948.
NTE5580Silicon controlled rectiifier for phase control applications. Repetitive peak off-state and reverse voltage Vdrm,Vrrm = 200V. Max RMS on-state current It(rms) = 235A.
NTE
-
4
-40°C
125°C
23K
1949.
NTE5582Silicon controlled rectiifier for phase control applications. Repetitive peak off-state and reverse voltage Vdrm,Vrrm = 600V. Max RMS on-state current It(rms) = 235A.
NTE
-
4
-40°C
125°C
23K
1950.
NTE5584Silicon controlled rectiifier for phase control applications. Repetitive peak off-state and reverse voltage Vdrm,Vrrm = 1200V. Max RMS on-state current It(rms) = 235A.
NTE
-
4
-40°C
125°C
23K
1951.
NTE5585Silicon controlled rectiifier for phase control applications. Repetitive peak off-state and reverse voltage Vdrm,Vrrm = 1600V. Max RMS on-state current It(rms) = 235A.
NTE
-
4
-40°C
125°C
23K
1952.
NTE5586Silicon controlled rectiifier for phase control applications. Repetitive peak voltage Vdrm,Vrrm = 600V. RMS on-state current It(rms) = 355A.
NTE
-
4
-40°C
125°C
23K
1953.
NTE5587Silicon controlled rectiifier for phase control applications. Repetitive peak voltage Vdrm,Vrrm = 600V. RMS on-state current It(rms) = 550A.
NTE
-
4
-40°C
125°C
24K
1954.
NTE5587Silicon controlled rectiifier for phase control applications. Repetitive peak voltage Vdrm,Vrrm = 600V. RMS on-state current It(rms) = 550A.
NTE
-
4
-40°C
125°C
24K
1955.
NTE5589Silicon controlled rectiifier for phase control applications. Repetitive peak voltage Vdrm,Vrrm = 1200V. RMS on-state current It(rms) = 550A.
NTE
-
4
-40°C
125°C
24K
1956.
NTE5590Silicon controlled rectiifier (SCR), 470 Amp. Repetitive peak voltage Vdrm,Vrrm,Vdsm = 200V. RMS on-state current It(rms) = 780A.
NTE
-
3
-40°C
125°C
21K
1957.
NTE5591Silicon controlled rectiifier (SCR), 470 Amp. Repetitive peak voltage Vdrm,Vrrm,Vdsm = 600V. RMS on-state current It(rms) = 780A.
NTE
-
3
-40°C
125°C
21K
1958.
NTE5592Silicon controlled rectiifier (SCR), 470 Amp. Repetitive peak voltage Vdrm,Vrrm,Vdsm = 1200V. RMS on-state current It(rms) = 780A.
NTE
-
3
-40°C
125°C
21K
1959.
NTE5593Silicon controlled rectiifier for phase control applications. Repetitive peak voltage Vdrm,Vrrm = 1600V. RMS on-state current It(rms) = 550A.
NTE
-
4
-40°C
125°C
24K
1960.
NTE5597Silicon controlled rectiifier (SCR), 470 Amp. Repetitive peak voltage Vdrm,Vrrm,Vdsm = 1600V. RMS on-state current It(rms) = 780A.
NTE
-
3
-40°C
125°C
21K
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