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Found: 2830      Displaying: 1921 - 1940
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
1921.
NTE5541Silicon controlled rectifier (SCR). Repetitive peak off-state & reverse voltage Vdrm,Vrrm =50V. RMS on-state current 35A.
NTE
TO48
3
-40°C
150°C
19K
1922.
NTE5542Silicon controlled rectifier (SCR). Repetitive peak off-state & reverse voltage Vdrm,Vrrm = 100V. RMS on-state current 35A.
NTE
TO48
3
-40°C
150°C
19K
1923.
NTE5543Silicon controlled rectifier (SCR). Repetitive peak off-state & reverse voltage Vdrm,Vrrm = 200V. RMS on-state current 35A.
NTE
TO48
3
-40°C
150°C
19K
1924.
NTE5544Silicon controlled rectifier (SCR). Repetitive peak off-state & reverse voltage Vdrm,Vrrm = 300V. RMS on-state current 35A.
NTE
TO48
3
-40°C
150°C
19K
1925.
NTE5545Silicon controlled rectifier (SCR). Repetitive peak off-state & reverse voltage Vdrm,Vrrm = 400V. RMS on-state current 35A.
NTE
TO48
3
-40°C
150°C
19K
1926.
NTE5546Silicon controlled rectifier (SCR). Repetitive peak off-state & reverse voltage Vdrm,Vrrm = 500V. RMS on-state current 35A.
NTE
TO48
3
-40°C
150°C
19K
1927.
NTE5547Silicon controlled rectifier (SCR). Repetitive peak off-state & reverse voltage Vdrm,Vrrm = 600V. RMS on-state current 35A.
NTE
TO48
3
-40°C
150°C
19K
1928.
NTE5550Silicon controlled rectifier. Peak reverse blocking voltage Vrrm = 50V. Forward current 25A.
NTE
TO220
3
-40°C
125°C
20K
1929.
NTE5552Silicon controlled rectifier. Peak reverse blocking voltage Vrrm = 200V. Forward current 25A.
NTE
TO220
3
-40°C
125°C
20K
1930.
NTE5554Silicon controlled rectifier. Peak reverse blocking voltage Vrrm = 400V. Forward current 25A.
NTE
TO220
3
-40°C
125°C
20K
1931.
NTE5556Silicon controlled rectifier. Peak reverse blocking voltage Vrrm = 600V. Forward current 25A.
NTE
TO220
3
-40°C
125°C
20K
1932.
NTE555ASilicon pin diode. VNF band switch.
NTE
DO34
2
0°C
150°C
17K
1933.
NTE5562Silicon controlled rectifier (SCR). Repetitive peak off-state & reverse voltage Vdrm,Vrrm = 200V. RMS on-state current It(rms) = 35A.
NTE
TO-48
3
-40°C
150°C
21K
1934.
NTE5564Silicon controlled rectifier (SCR). Repetitive peak off-state & reverse voltage Vdrm,Vrrm = 400V. RMS on-state current It(rms) = 35A.
NTE
TO-48
3
-40°C
150°C
21K
1935.
NTE5566Silicon controlled rectifier (SCR). Repetitive peak off-state & reverse voltage Vdrm,Vrrm = 600V. RMS on-state current It(rms) = 35A.
NTE
TO-48
3
-40°C
150°C
21K
1936.
NTE5567Silicon controlled rectiifier (SCR) for phase control applications. Max repetitive peak forward and reverse voltage 200V. Max non - repetitive peak voltage 300V. Max peak reverse and off-state current 15mA.
NTE
-
3
-40°C
125°C
26K
1937.
NTE5568Silicon controlled rectiifier (SCR) for phase control applications. Max repetitive peak forward and reverse voltage 600V. Max non - repetitive peak voltage 700V. Max peak reverse and off-state current 15mA.
NTE
-
3
-40°C
125°C
26K
1938.
NTE5569Silicon controlled rectiifier (SCR) for phase control applications. Max repetitive peak forward and reverse voltage 1200V. Max non - repetitive peak voltage 1300V. Max peak reverse and off-state current 15mA.
NTE
-
3
-40°C
125°C
26K
1939.
NTE5570Silicon controlled rectiifier for phase control applications. Repetitive peak voltage, Vrrm = 200V. Non - repetitive peak reverse blocking voltage, Vrsm = 500V. RMS on-state current, Itrms = 125A.
NTE
-
4
-40°C
125°C
21K
1940.
NTE5571Silicon controlled rectiifier (SCR) for phase control applications. Max repetitive peak forward and reverse voltage 1600V. Max non - repetitive peak voltage 1700V. Max peak reverse and off-state current 15mA.
NTE
-
3
-40°C
125°C
26K
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