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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1901. | NTE5518 | Silicon controlled rectifier (SCR). Repetitive peak reverse voltage Vrrm = 400V. RMS on-state current It(rms) = 35A. | NTE | - | 3 | -40°C | 150°C | 18K |
| 1902. | NTE5519 | Silicon controlled rectifier (SCR). Repetitive peak reverse voltage Vrrm = 600V. RMS on-state current It(rms) = 35A. | NTE | - | 3 | -40°C | 150°C | 18K |
| 1903. | NTE5519 | Silicon controlled rectifier (SCR). Repetitive peak reverse voltage Vrrm = 600V. RMS on-state current It(rms) = 35A. | NTE | - | 3 | -40°C | 150°C | 18K |
| 1904. | NTE552 | Silicon rectifier. Max reccurent reverse voltage 600V. Max average forward rectified current 1A. | NTE | DO41 | 2 | -65°C | 175°C | 17K |
| 1905. | NTE5520 | Silicon controlled rectifier (SCR), 25A. Repetitive peak forward and reverse voltage Vdrm,Vrrm = 25V. RMS forard current It(rms) = 25A. | NTE | TO48 | 3 | -65°C | 125°C | 18K |
| 1906. | NTE5521 | Silicon controlled rectifier (SCR), 25A. Repetitive peak forward and reverse voltage Vdrm,Vrrm = 50V. RMS forard current It(rms) = 25A. | NTE | TO48 | 3 | -65°C | 125°C | 18K |
| 1907. | NTE5522 | Silicon controlled rectifier (SCR), 25A. Repetitive peak forward and reverse voltage Vdrm,Vrrm = 100V. RMS forard current It(rms) = 25A. | NTE | TO48 | 3 | -65°C | 125°C | 18K |
| 1908. | NTE5523 | Silicon controlled rectifier (SCR), 25A. Repetitive peak forward and reverse voltage Vdrm,Vrrm = 150V. RMS forard current It(rms) = 25A. | NTE | TO48 | 3 | -65°C | 125°C | 18K |
| 1909. | NTE5524 | Silicon controlled rectifier (SCR), 25A. Repetitive peak forward and reverse voltage Vdrm,Vrrm = 200V. RMS forard current It(rms) = 35A. | NTE | TO48 | 3 | -65°C | 125°C | 18K |
| 1910. | NTE5525 | Silicon controlled rectifier (SCR), 25A. Repetitive peak forward and reverse voltage Vdrm,Vrrm = 250V. RMS forard current It(rms) = 25A. | NTE | TO48 | 3 | -65°C | 125°C | 18K |
| 1911. | NTE5526 | Silicon controlled rectifier (SCR), 25A. Repetitive peak forward and reverse voltage Vdrm,Vrrm = 300V. RMS forard current It(rms) = 25A. | NTE | TO48 | 3 | -65°C | 125°C | 18K |
| 1912. | NTE5527 | Silicon controlled rectifier (SCR), 25A. Repetitive peak forward and reverse voltage Vdrm,Vrrm = 400V. RMS forard current It(rms) = 25A. | NTE | TO48 | 3 | -65°C | 125°C | 18K |
| 1913. | NTE5528 | Silicon controlled rectifier (SCR), 25A. Repetitive peak forward and reverse voltage Vdrm,Vrrm = 500V. RMS forard current It(rms) = 25A. | NTE | TO48 | 3 | -65°C | 125°C | 18K |
| 1914. | NTE5529 | Silicon controlled rectifier (SCR), 25A. Repetitive peak forward and reverse voltage Vdrm,Vrrm = 600V. RMS forard current It(rms) = 25A. | NTE | TO48 | 3 | -65°C | 125°C | 18K |
| 1915. | NTE553 | Schottky barrier diode. Reverse voltage -35V. Forward current 100mA. | NTE | DO35 | 2 | -20°C | 60°C | 17K |
| 1916. | NTE5530 | Silicon controlled rectifier (SCR), 25A. Repetitive peak forward and reverse voltage Vdrm,Vrrm = 700V. RMS forard current It(rms) = 25A. | NTE | TO48 | 3 | -65°C | 125°C | 18K |
| 1917. | NTE5531 | Silicon controlled rectifier (SCR), 25A. Repetitive peak forward and reverse voltage Vdrm,Vrrm = 800V. RMS forard current It(rms) = 25A. | NTE | TO48 | 3 | -65°C | 125°C | 18K |
| 1918. | NTE5538 | Silicon controlled rectifier (SCR). Peak forward blocking voltage 800V. RMS on-state current 50A. | NTE | TO218 | 3 | -40°C | 125°C | 23K |
| 1919. | NTE5539 | Silicon controlled rectifier (SCR). Repetitive peak off-state forward & reverse voltage Vdrm,Vrrm =400V. Max RMS on-state current 55A. | NTE | TO218 | 3 | -40°C | 125°C | 19K |
| 1920. | NTE5540 | Silicon controlled rectifier (SCR). Repetitive peak off-state forward & reverse voltage Vdrm,Vrrm =800V. Max RMS on-state current 55A. | NTE | TO218 | 3 | -40°C | 125°C | 19K |
