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GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.

Found: 2830      Displaying: 1861 - 1880
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
1861.
NTE5460Silicon controlled rectifier (SCR). Repetitive peak reverse voltage Vrrm = 800V. On-state RMS current It = 25A.
NTE
TO220
3
-40°C
125°C
21K
1862.
NTE5462Silicon controlled rectifier (SCR). Repetitive peak reverse voltage, repetitive peak off-state voltage Vrrm,Vdrm = 100V. RMS forward current It = 10A.
NTE
TO220
3
-40°C
100°C
20K
1863.
NTE5463Silicon controlled rectifier (SCR). Repetitive peak reverse voltage, repetitive peak off-state voltage Vrrm,Vdrm = 200V. RMS forward current It = 10A.
NTE
TO220
3
-40°C
100°C
20K
1864.
NTE5465Silicon controlled rectifier (SCR). Repetitive peak reverse voltage, repetitive peak off-state voltage Vrrm,Vdrm = 400V. RMS forward current It = 10A.
NTE
TO220
3
-40°C
100°C
20K
1865.
NTE5466Silicon controlled rectifier (SCR). Repetitive peak reverse voltage, repetitive peak off-state voltage Vrrm,Vdrm = 600V. RMS forward current It = 10A.
NTE
TO220
3
-40°C
100°C
20K
1866.
NTE5468Silicon controlled rectifier (SCR). Repetitive peak reverse voltage, repetitive peak off-state voltage Vrrm,Vdrm = 800V. RMS forward current It = 10A.
NTE
TO220
3
-40°C
100°C
20K
1867.
NTE5471Silicon controlled rectifier (SCR). Peak repetitive reverse and reverse blocking voltage Vrrm,Vdrm = 100V. Forward current RMS Itrms = 8A.
NTE
TO64
3
-40°C
100°C
21K
1868.
NTE5472Silicon controlled rectifier (SCR). Peak repetitive reverse and reverse blocking voltage Vrrm,Vdrm = 200V. Forward current RMS Itrms = 8A.
NTE
TO64
3
-40°C
100°C
21K
1869.
NTE5473Silicon controlled rectifier (SCR). Peak repetitive reverse and reverse blocking voltage Vrrm,Vdrm = 300V. Forward current RMS Itrms = 8A.
NTE
TO64
3
-40°C
100°C
21K
1870.
NTE5474Silicon controlled rectifier (SCR). Peak repetitive reverse and reverse blocking voltage Vrrm,Vdrm = 400V. Forward current RMS Itrms = 8A.
NTE
TO64
3
-40°C
100°C
21K
1871.
NTE5475Silicon controlled rectifier (SCR). Peak repetitive reverse and reverse blocking voltage Vrrm,Vdrm = 500V. Forward current RMS Itrms = 8A.
NTE
TO64
3
-40°C
100°C
21K
1872.
NTE5480Silicon controlled rectifier (SCR). Peak repetitive reverse and reverse blocking voltage Vrrm,Vdrm = 25V. Forward current RMS Itrms = 8A.
NTE
TO64
3
-40°C
100°C
22K
1873.
NTE5481Silicon controlled rectifier (SCR). Peak repetitive reverse and reverse blocking voltage Vrrm,Vdrm = 50V. Forward current RMS Itrms = 8A.
NTE
TO64
3
-40°C
100°C
22K
1874.
NTE5482Silicon controlled rectifier (SCR). Peak repetitive reverse and reverse blocking voltage Vrrm,Vdrm = 100V. Forward current RMS Itrms = 8A.
NTE
TO64
3
-40°C
100°C
22K
1875.
NTE5484Silicon controlled rectifier (SCR). Peak repetitive reverse and reverse blocking voltage Vrrm,Vdrm = 300V. Forward current RMS Itrms = 8A.
NTE
TO64
3
-40°C
100°C
22K
1876.
NTE5485Silicon controlled rectifier (SCR). Peak repetitive reverse and reverse blocking voltage Vrrm,Vdrm = 400V. Forward current RMS Itrms = 8A.
NTE
TO64
3
-40°C
100°C
22K
1877.
NTE5486Silicon controlled rectifier (SCR). Peak repetitive reverse and reverse blocking voltage Vrrm,Vdrm = 500V. Forward current RMS Itrms = 8A.
NTE
TO64
3
-40°C
100°C
22K
1878.
NTE5487Silicon controlled rectifier (SCR). Peak repetitive reverse and reverse blocking voltage Vrrm,Vdrm = 600V. Forward current RMS Itrms = 8A.
NTE
TO64
3
-40°C
100°C
22K
1879.
NTE5491Silicon controlled rectifier (SCR), 10 Amp. Peak repetitive off-state blocking voltage Vrrm,Vdrm = 100V. RMS on-state current Itrms = 25A.
NTE
-
3
-65°C
125°C
21K
1880.
NTE5492Silicon controlled rectifier (SCR), 10 Amp. Peak repetitive off-state blocking voltage Vrrm,Vdrm = 200V. RMS on-state current Itrms = 25A.
NTE
-
3
-65°C
125°C
21K
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