GETDATASHEET.COM - Datasheets search system
HOME  |  DATASHEETS  |  LOGOTYPES |  SEARCH COMPANY |  ABOUT SITE  |  PRODUCERS  | 

We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.) GetDatasheet.com is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide. All Data provided on this web site and the associated web pages is provided as is. It is intended to be for general information only, and is thus provided without any express or implied warranty or guarantee. It is the responsibility of the user or reader to ensure and confirm that this information is accurate and correct with the original publisher of the data sheet. Most of the data sheets below are in the "pdf" format so it would be adviseable to use Adobe Acrobat Reader.

OVER 1.000.000 DATASHEETS (Technical documentation on electronical components)
  Search datasheet:
Example: max232

Searchign results: NTE


Why GetDatasheet.com ?
We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.

Found: 2830      Displaying: 1221 - 1240
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
1221.
NTE3301Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch.
NTE
TO220
3
0°C
150°C
19K
1222.
NTE3302Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch.
NTE
TO220
3
0°C
150°C
19K
1223.
NTE3303Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch.
NTE
TO220
3
0°C
150°C
19K
1224.
NTE331Silicon complementary NPN transistor. Audio power amp, switch.
NTE
TO220
3
0°C
150°C
21K
1225.
NTE3310Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch.
NTE
-
3
0°C
150°C
18K
1226.
NTE3311Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch.
NTE
-
3
0°C
150°C
18K
1227.
NTE3312Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch.
NTE
-
3
0°C
150°C
18K
1228.
NTE332Silicon complementary PNP transistor. Audio power amp, switch.
NTE
TO220
3
0°C
150°C
21K
1229.
NTE3320Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch.
NTE
-
3
0°C
150°C
20K
1230.
NTE3321Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch.
NTE
-
3
0°C
150°C
20K
1231.
NTE3322Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch.
NTE
-
3
0°C
150°C
20K
1232.
NTE3323Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch.
NTE
-
3
0°C
150°C
20K
1233.
NTE337Silicon NPN transistor. RF power amp, driver.
NTE
T72H
4
-65°C
200°C
22K
1234.
NTE340Silicon NPN transistor. RF power output, high frequency.
NTE
TO92
3
0°C
150°C
19K
1235.
NTE342Silicon NPN transistor. RF power output (Po = 6W, 175MHz).
NTE
-
3
0°C
150°C
21K
1236.
NTE343Silicon NPN transistor. RF power output (Po = 14W, 175MHz).
NTE
-
3
0°C
175°C
21K
1237.
NTE345Silicon NPN transistor. RF power amp, driver.
NTE
T72H
4
-65°C
200°C
21K
1238.
NTE345Silicon NPN transistor. RF power amp, driver.
NTE
T72H
4
-65°C
200°C
21K
1239.
NTE346Silicon NPN transistor. RF power transistor.
NTE
TO39
3
-
-
23K
1240.
NTE348Silicon NPN transistor. RF power amp, driver.
NTE
T72H
4
-
-
22K
<< 57 58 59 60 61 62 63 64 65 66 67 >>


Main page

 
 Copyright © GetDatasheet.com 2005 - 2025 (Datasheets)   About site | Datasheet support
Valid HTML 4.01 TransitionalValid CSS!