We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet.com is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
All Data provided on this web site and the associated web pages is provided as is. It is intended to be for general information only, and is thus provided without any express or implied warranty or guarantee. It is the responsibility of the user or reader to ensure and confirm that this information is accurate and correct with the original publisher of the data sheet.
Most of the data sheets below are in the "pdf" format so it would be adviseable to use Adobe Acrobat Reader.
| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 721. | NTE2087 | Integrated circuit. 4-stage darlington array w/pre-drive stage for TTL. | NTE | - | 16 | -20°C | 85°C | 20K |
| 722. | NTE2088 | Integrated circuit. 4-segment darlington array w/pre-drive stage for use with PMOS and 12V CMOS. | NTE | DIP | 16 | -20°C | 85°C | 22K |
| 723. | NTE2090 | Integrated circuit. 7-channel transistor array. | NTE | DIP | 16 | -40°C | 85°C | 21K |
| 724. | NTE2102 | Integrated circuit. NMOS, 1K static RAM (SRAM), 35ns. | NTE | DIP | 16 | 0°C | 70°C | 28K |
| 725. | NTE21128 | Integrated circuit. NMOS, 128K (16K x 8) UV EPROM. | NTE | DIP | 28 | 0°C | 70°C | 37K |
| 726. | NTE2114 | Integrated circuit. MOS, static 4K RAM, 300ns. | NTE | DIP | 18 | 0°C | 70°C | 29K |
| 727. | NTE2114 | Integrated circuit. MOS, static 4K RAM, 300ns. | NTE | DIP | 18 | 0°C | 70°C | 29K |
| 728. | NTE21256 | 262, 144-bit dynamic random access memory (DRAM). | NTE | DIP | 16 | 0°C | 70°C | 42K |
| 729. | NTE22 | Silicon NPN transistor. AF PO, general purpose amplifier, driver. | NTE | - | 3 | 0°C | 135°C | 19K |
| 730. | NTE221 | MOSFET Dual gate, N-channel for VHF TV receivers applications. | NTE | - | 3 | -65°C | 175°C | 24K |
| 731. | NTE222 | Feild effect transistor. Dual gate N-cannel MOSFET. | NTE | - | 3 | -65°C | 175°C | 24K |
| 732. | NTE222 | Feild effect transistor. Dual gate N-cannel MOSFET. | NTE | - | 3 | -65°C | 175°C | 24K |
| 733. | NTE226 | Germanium PNP transistor. Audio power amp. | NTE | TO66 | 2 | 0°C | 85°C | 17K |
| 734. | NTE227 | Silicon NPN transistor. High voltage amp, video output. | NTE | - | 3 | 0°C | 150°C | 20K |
| 735. | NTE228A | Silicon NPN transistor. High voltage amp, video output. | NTE | TO202M | 3 | -55°C | 150°C | 23K |
| 736. | NTE229 | Silicon NPN transistor. VNF oscillator, mixer, IF amp. | NTE | - | 3 | 0°C | 150°C | 20K |
| 737. | NTE23 | Silicon NPN transistor. Ultra high frequency amp. | NTE | - | 3 | 0°C | 150°C | 20K |
| 738. | NTE23 | Silicon NPN transistor. Ultra high frequency amp. | NTE | - | 3 | 0°C | 150°C | 20K |
| 739. | NTE230 | Silicon controlled rectifier (SCR). TV deflection circuit. | NTE | - | 2 | -40°C | 100°C | 22K |
| 740. | NTE2300 | Silicon NPN transistor. High voltage, horizontal output. | NTE | TO3P | 3 | 0°C | 150°C | 21K |
