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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 661. | NTE1971 | Integrated circuit. Negative 3 terminal voltage regulator, Vout = -12.0V, Test conditions: Io = 0.5A. | NTE | TO220 | 3 | -30°C | 75°C | 29K |
| 662. | NTE1973 | Integrated circuit. Negative 3 terminal voltage regulator, Vout = -15.0V, Test conditions: Io = 0.5A. | NTE | TO220 | 3 | -30°C | 75°C | 29K |
| 663. | NTE1975 | Integrated circuit. Negative 3 terminal voltage regulator, Vout = -18.0V, Test conditions: Io = 0.5A. | NTE | TO220 | 3 | -30°C | 75°C | 29K |
| 664. | NTE1975 | Integrated circuit. Negative 3 terminal voltage regulator, Vout = -18.0V, Test conditions: Io = 0.5A. | NTE | TO220 | 3 | -30°C | 75°C | 29K |
| 665. | NTE1977 | Integrated circuit. Negative 3 terminal voltage regulator, Vout = -24.0V, Test conditions: Io = 0.5A. | NTE | TO220 | 3 | -30°C | 75°C | 29K |
| 666. | NTE1979 | Integrated circuit. Negative 3 terminal voltage regulator, -8.0V, 100mA. | NTE | - | 3 | -20°C | 80°C | 25K |
| 667. | NTE20 | Silicon complementary NPN transistor. High power, low collector satutation voltage power output. | NTE | ATR | 3 | 0°C | 135°C | 19K |
| 668. | NTE2003 | Integrated circuit. Dolby B-type noise reduction processor. | NTE | DIP | 16 | 0°C | 70°C | 23K |
| 669. | NTE2011 | Integrated circuit. 7-channel darlington array/driver. | NTE | DIP | 16 | -20°C | 85°C | 23K |
| 670. | NTE2012 | Integrated circuit. 7-channel darlington array/driver. | NTE | DIP | 16 | -20°C | 85°C | 23K |
| 671. | NTE21 | Silicon complementary PNP transistor. High power, low collector satutation voltage power output. | NTE | ATR | 3 | 0°C | 135°C | 19K |
| 672. | NTE210 | Silicon complementary NPN transistor. General purpose output & driver. | NTE | TO202 | 3 | -50°C | 150°C | 22K |
| 673. | NTE210 | Silicon complementary NPN transistor. General purpose output & driver. | NTE | TO202 | 3 | -50°C | 150°C | 22K |
| 674. | NTE211 | Silicon complementary PNP transistor. General purpose output & driver. | NTE | TO202 | 3 | -50°C | 150°C | 22K |
| 675. | NTE213 | Germanium PNP transistor. High power, high gain amplifier. | NTE | TO36 | 2 | -65°C | 110°C | 23K |
| 676. | NTE214 | Silicon NPN transistor. Darlington driver. | NTE | TO3P | 3 | 0°C | 150°C | 22K |
| 677. | NTE215 | Silicon NPN transistor. Darlington driver. | NTE | TO3P | 3 | 0°C | 150°C | 22K |
| 678. | NTE215 | Silicon NPN transistor. Darlington driver. | NTE | TO3P | 3 | 0°C | 150°C | 22K |
| 679. | NTE216 | Silicon NPN transistor. High speed switch, core driver. | NTE | - | 3 | 0°C | 150°C | 19K |
| 680. | NTE218 | Silicon PNP transistor. Audio power output. | NTE | TO3 | 2 | -65°C | 200°C | 23K |
