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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 2401. | NTE6240 | Silicon rectifier, super fast, dual, positive center tap. Max recurrent peak reverse voltage 200V. Max average forward rectified current 16A. | NTE | TO220 | 3 | -65°C | 150°C | 20K |
| 2402. | NTE6241 | Silicon rectifier, super fast, dual, center tap. Peak repetitive reverse voltage 200V. Average rectified forward current 8A (per diode), 16A (total device). | NTE | TO220 | 3 | -65°C | 175°C | 20K |
| 2403. | NTE6244 | Silicon rectifier, super fast, dual, negative center tap. Max recurrent peak reverse voltage 200V. Max average forward rectified current 16A. | NTE | TO220 | 3 | -65°C | 150°C | 20K |
| 2404. | NTE6246 | Ultrafast switchmode power rectifier. Peak repetitive reverse voltage 200V. Average rectified forward current 15A (per lag), 30A (per device). | NTE | - | 3 | -65°C | 175°C | 20K |
| 2405. | NTE6247 | Ultrafast switchmode power rectifier. Peak repetitive reverse voltage 600V. Average rectified forward current 15A (per lag), 30A (per device). | NTE | - | 3 | -65°C | 175°C | 20K |
| 2406. | NTE6248 | Silicon schottky barrier rectifier. Max recurrent peak reverse voltage 600V. Max average rectified forward current 16A. | NTE | - | 2 | -55°C | 175°C | 19K |
| 2407. | NTE6251 | Silicon rectifier. Dual, positive center tap. Max repetitive peak reverse voltage 200V. Max average forward rectified current 30A. | NTE | - | 3 | -55°C | 150°C | 19K |
| 2408. | NTE63 | Silicon NPN transistor. High gain, low noise aplifier. | NTE | - | 4 | -65°C | 150°C | 22K |
| 2409. | NTE6354 | Silicon power rectifier diode, 300 Amp. Cathode to case. Max repetitive peak reverse voltage 400V. | NTE | - | 2 | -40°C | 180°C | 25K |
| 2410. | NTE6355 | Silicon power rectifier diode, 300 Amp. Anode to case. Max repetitive peak reverse voltage 400V. | NTE | - | 2 | -40°C | 180°C | 25K |
| 2411. | NTE6356 | Silicon power rectifier diode, 300 Amp. Cathode to case. Max repetitive peak reverse voltage 600V. | NTE | - | 2 | -40°C | 180°C | 25K |
| 2412. | NTE6357 | Silicon power rectifier diode, 300 Amp. Anode to case. Max repetitive peak reverse voltage 600V. | NTE | - | 2 | -40°C | 180°C | 25K |
| 2413. | NTE6358 | Silicon power rectifier diode, 300 Amp. Cathode to case. Max repetitive peak reverse voltage 1000V. | NTE | - | 2 | -40°C | 180°C | 25K |
| 2414. | NTE6359 | Silicon power rectifier diode, 300 Amp. Anode to case. Max repetitive peak reverse voltage 1000V. | NTE | - | 2 | -40°C | 180°C | 25K |
| 2415. | NTE6362 | Silicon power rectifier diode, 300 Amp. Cathode to case. Max repetitive peak reverse voltage 1400V. | NTE | - | 2 | -40°C | 180°C | 25K |
| 2416. | NTE6363 | Silicon power rectifier diode, 300 Amp. Anode to case. Max repetitive peak reverse voltage 1400V. | NTE | - | 2 | -40°C | 180°C | 25K |
| 2417. | NTE6364 | Silicon power rectifier diode, 300 Amp. Cathode to case. Max repetitive peak reverse voltage 1600V. | NTE | - | 2 | -40°C | 180°C | 25K |
| 2418. | NTE6365 | Silicon power rectifier diode, 300 Amp. Anode to case. Max repetitive peak reverse voltage 1600V. | NTE | - | 2 | -40°C | 180°C | 25K |
| 2419. | NTE64 | Silicon NPN transistor. UHF high speed switch. | NTE | - | 4 | - | - | 21K |
| 2420. | NTE6400 | Unijunction transistor. Interbase voltage 35V. | NTE | - | 3 | -65°C | 140°C | 19K |
