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Found: 2830      Displaying: 2181 - 2200
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
2181.
NTE5810Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1200V. Average forward current 12A.
NTE
DO4
2
-65°C
175°C
24K
2182.
NTE5811Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1200V. Average forward current 12A.
NTE
DO4
2
-65°C
175°C
24K
2183.
NTE5871Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 12A.
NTE
DO4
2
-65°C
175°C
24K
2184.
NTE5873Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 12A.
NTE
DO4
2
-65°C
175°C
24K
2185.
NTE5875Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 12A.
NTE
DO4
2
-65°C
175°C
24K
2186.
NTE5877Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 12A.
NTE
DO4
2
-65°C
175°C
24K
2187.
NTE5881Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 500V. Average forward current 12A.
NTE
DO4
2
-65°C
175°C
24K
2188.
NTE5883Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 600V. Average forward current 12A.
NTE
DO4
2
-65°C
175°C
24K
2189.
NTE5887Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 12A.
NTE
DO4
2
-65°C
175°C
24K
2190.
NTE5893Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 16A.
NTE
DO4
2
-65°C
175°C
24K
2191.
NTE5895Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 16A.
NTE
DO4
2
-65°C
175°C
24K
2192.
NTE5897Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 16A.
NTE
DO4
2
-65°C
175°C
24K
2193.
NTE5899Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 16A.
NTE
DO4
2
-65°C
175°C
24K
2194.
NTE5901Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 16A.
NTE
DO4
2
-65°C
175°C
24K
2195.
NTE5901Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 16A.
NTE
DO4
2
-65°C
175°C
24K
2196.
NTE5903Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 500V. Average forward current 16A.
NTE
DO4
2
-65°C
175°C
24K
2197.
NTE5905Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 600V. Average forward current 16A.
NTE
DO4
2
-65°C
175°C
24K
2198.
NTE5909Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 16A.
NTE
DO4
2
-65°C
175°C
24K
2199.
NTE5911Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 16A.
NTE
DO4
2
-65°C
175°C
24K
2200.
NTE5911Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 16A.
NTE
DO4
2
-65°C
175°C
24K
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