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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 2141. | NTE5850 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 50V. Average forward current 6A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 2142. | NTE5851 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 6A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 2143. | NTE5852 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 2144. | NTE5854 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 2145. | NTE5856 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 2146. | NTE5858 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 2147. | NTE5860 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 2148. | NTE5862 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 2149. | NTE5866 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 2150. | NTE5868 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 6A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 2151. | NTE593 | Silicon diode, high speed switch. Repetitive peak reverse voltage 85V. Average rectified forward current 250mA. | NTE | SOT-23 | 3 | 0°C | 150°C | 18K |
| 2152. | NTE593 | Silicon diode, high speed switch. Repetitive peak reverse voltage 85V. Average rectified forward current 250mA. | NTE | SOT-23 | 3 | 0°C | 150°C | 18K |
| 2153. | NTE594 | Silicon diode, bandswitch. Continuous reverse voltage 35V. DC forward current 100mA. | NTE | SOT-23 | 3 | 0°C | 125°C | 16K |
| 2154. | NTE595 | Silicon diode, dual, common cathode, high speed . Continuous reverse voltage 70V. DC forward current 250mA. | NTE | SOT-23 | 3 | 0°C | 175°C | 19K |
| 2155. | NTE596 | Silicon diode, dual, common anode, high speed . Continuous reverse voltage 70V. DC forward current 250mA. | NTE | SOT-23 | 3 | 0°C | 175°C | 19K |
| 2156. | NTE597 | Silicon rectifier, ultra fast. Peak repetitive reverse voltage 200V. Average rectified forward current 8A. | NTE | TO220 | 2 | -65°C | 175°C | 18K |
| 2157. | NTE598 | Silicon rectifier, ultra fast. Peak repetitive reverse voltage 600V. Average rectified forward current 8A. | NTE | TO220 | 2 | -65°C | 175°C | 18K |
| 2158. | NTE599 | Silicon rectifier, ultra fast. Peak repetitive reverse voltage 200V. Average rectified forward current 15A. | NTE | TO220 | 2 | -65°C | 175°C | 18K |
| 2159. | NTE601 | Silicon varistor, temperature compensating diode. Max forward current 150mA. | NTE | - | 2 | 0°C | 150°C | 15K |
| 2160. | NTE605A | Silicon varistor, temperature compensating diode. Max forward current 100mA. | NTE | - | 2 | 0°C | 150°C | 19K |
