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Found: 2830      Displaying: 2101 - 2120
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
2101.
NTE581General purpose silicon rectifier. Fast recovery. Max recurrent peak reverse voltage 400V. Max RMS voltage 280V. Max average forward rectified current 8A.
NTE
-
2
-65°C
175°C
17K
2102.
NTE58126 Amp. Plastic silicon rectifier. Max recurrent peak reverse voltage 100V. Max RMS voltage 70V. Max average forward rectified current 6A.
NTE
-
2
-65°C
175°C
15K
2103.
NTE58156 Amp. Plastic silicon rectifier. Max recurrent peak reverse voltage 600V. Max RMS voltage 420V. Max average forward rectified current 6A.
NTE
-
2
-65°C
175°C
15K
2104.
NTE58176 Amp. Plastic silicon rectifier. Max recurrent peak reverse voltage 1000V. Max RMS voltage 700V. Max average forward rectified current 6A.
NTE
-
2
-65°C
175°C
15K
2105.
NTE5818Silicon power rectifier. Stud mount, fast recovery, 12 Amp. Peak repetitive reverse voltage 200V. Non-repetitive peak reverse voltage 250V.
NTE
DO4
2
-65°C
150°C
18K
2106.
NTE5819Silicon power rectifier. Stud mount, fast recovery, 12 Amp. Peak repetitive reverse voltage 200V. Non-repetitive peak reverse voltage 250V.
NTE
DO4
2
-65°C
150°C
18K
2107.
NTE5820Silicon power rectifier. Stud mount, fast recovery, 12 Amp. Peak repetitive reverse voltage 400V. Non-repetitive peak reverse voltage 450V.
NTE
DO4
2
-65°C
150°C
18K
2108.
NTE5821Silicon power rectifier. Stud mount, fast recovery, 12 Amp. Peak repetitive reverse voltage 400V. Non-repetitive peak reverse voltage 450V.
NTE
DO4
2
-65°C
150°C
18K
2109.
NTE5821Silicon power rectifier. Stud mount, fast recovery, 12 Amp. Peak repetitive reverse voltage 400V. Non-repetitive peak reverse voltage 450V.
NTE
DO4
2
-65°C
150°C
18K
2110.
NTE5822Silicon power rectifier. Stud mount, fast recovery, 12 Amp. Peak repetitive reverse voltage 600V. Non-repetitive peak reverse voltage 660V.
NTE
DO4
2
-65°C
150°C
18K
2111.
NTE5823Silicon power rectifier. Stud mount, fast recovery, 12 Amp. Peak repetitive reverse voltage 600V. Non-repetitive peak reverse voltage 660V.
NTE
DO4
2
-65°C
150°C
18K
2112.
NTE5824Silicon power rectifier. Stud mount, fast recovery, 12 Amp. Peak repetitive reverse voltage 1000V. Non-repetitive peak reverse voltage 1100V.
NTE
DO4
2
-65°C
150°C
18K
2113.
NTE5826Silicon power rectifier diode, 50 Amp. Peak repetitive reverse voltage 400V. Non-repetitive peak reverse voltage 450V.
NTE
-
2
-65°C
195°C
18K
2114.
NTE5827Silicon power rectifier diode, 50 Amp. Peak repetitive reverse voltage 400V. Non-repetitive peak reverse voltage 450V.
NTE
-
2
-65°C
195°C
18K
2115.
NTE5828Silicon power rectifier diode, 50 Amp. Peak repetitive reverse voltage 800V. Non-repetitive peak reverse voltage 850V.
NTE
-
2
-65°C
195°C
18K
2116.
NTE5829Silicon power rectifier diode, 50 Amp. Peak repetitive reverse voltage 800V. Non-repetitive peak reverse voltage 850V.
NTE
-
2
-65°C
195°C
18K
2117.
NTE583Silicon rectifier diode, schottky, RF switch. Repetitive peak reverse voltage 70V. Forward continuous current 15mA.
NTE
-
2
-65°C
200°C
--
2118.
NTE5830Stud mount standart recovery. Silicon rectifier, 3 Amp. Peak repetitive reverse voltage, DC blocking voltage 50V.
NTE
DO4
2
-65°C
175°C
18K
2119.
NTE5832Stud mount standart recovery. Silicon rectifier, 3 Amp. Peak repetitive reverse voltage, DC blocking voltage 100V.
NTE
DO4
2
-65°C
175°C
18K
2120.
NTE5833Stud mount standart recovery. Silicon rectifier, 3 Amp. Peak repetitive reverse voltage, DC blocking voltage 100V.
NTE
DO4
2
-65°C
175°C
18K
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