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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 381. | HN8050C | 25 V, NPN silicon expitaxial planar transistor | HONEY | - | 3 | - | - | 319K |
| 382. | HN8050D | 25 V, NPN silicon expitaxial planar transistor | HONEY | - | 3 | - | - | 319K |
| 383. | IXFH20N80Q | 800V HiPerFET power MOSFET Q-class | IXYS | TO-247AD | 3 | -55°C | 150°C | 72K |
| 384. | IXFH9N80Q | 800V HiPerFET power MOSFET Q-class | IXYS | TO-247AD | 3 | -55°C | 150°C | 90K |
| 385. | IXFK20N80Q | 800V HiPerFET power MOSFET Q-class | IXYS | TO-264AA | 3 | -55°C | 150°C | 72K |
| 386. | IXFK27N80Q | 800V HiPerFET power MOSFET Q-class | IXYS | TO-264AA | 3 | -55°C | 150°C | 55K |
| 387. | IXFN13N80Q | 800V HiPerFET power MOSFET Q-class | IXYS | TO-247AD | 3 | -55°C | 150°C | 51K |
| 388. | IXFN27N80Q | 800V HiPerFET power MOSFET Q-class | IXYS | SOT-227B | 4 | -55°C | 150°C | 108K |
| 389. | IXFN80N48 | 480V HiPerFET power MOSFET | IXYS | SOT-227B | 4 | -55°C | 150°C | 135K |
| 390. | IXFN80N50 | 500V HiPerFET power MOSFET single die MOSFET | IXYS | SOT-227B | 4 | -55°C | 150°C | 126K |
| 391. | IXFR15N80Q | 800V HiPerFET power MOSFET | IXYS | ISOPLUS247 | 3 | -55°C | 150°C | 33K |
| 392. | IXFR27N80Q | 800V HiPerFET power MOSFET Q-class | IXYS | ISOPLUS247 | 3 | -55°C | 150°C | 55K |
| 393. | IXFT13N80Q | 800V HiPerFET power MOSFET Q-class | IXYS | TO-268 | 3 | -55°C | 150°C | 51K |
| 394. | IXFT15N80Q | 800V HiPerFET power MOSFET Q-class | IXYS | TO-268 | 3 | -55°C | 150°C | 111K |
| 395. | IXFT20N80Q | 800V HiPerFET power MOSFET Q-class | IXYS | TO-268 | 3 | -55°C | 150°C | 72K |
| 396. | IXFT9N80Q | 800V HiPerFET power MOSFET Q-class | IXYS | TO-268 | 3 | -55°C | 150°C | 90K |
| 397. | IXFX27N80Q | 800V HiPerFET power MOSFET Q-class | IXYS | ISOPLUS247 | 3 | -55°C | 150°C | 55K |
| 398. | IXKC25N80C | 800V coolMOS power MOSFET | IXYS | ISOPLUS220 | 3 | -55°C | 175°C | 1M |
| 399. | IXSN80N60BD1 | 600V IGBT with diode | IXYS | SOT-227B | 4 | -55°C | 150°C | 62K |
| 400. | STH8N80FI | Power dissipation 70 W Transistor polarity N Channel Current Id cont. 5.1 A Current Idm pulse 35 A Voltage isolation 4 kV Pitch lead 5.45 mm Voltage Vds max 800 V Resistance Rds on 1.2 R | STM | ISOWATT-218 | - | - | - | 345K |
