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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 21. | 1N6513 | 2000 V rectifier 0.5-2 mA forward current,70 ns recovery time | VMI | - | 2 | -65°C | 175°C | 95K |
| 22. | 1N6513LL | 2000 V rectifier 1.5-3.5 A forward current, 70 ns recovery time | VMI | - | 2 | -65°C | 175°C | 264K |
| 23. | 1N6515 | 3000 V rectifier 0.5-2 mA forward current,70 ns recovery time | VMI | - | 2 | -65°C | 175°C | 95K |
| 24. | 1N6515LL | 3000 V rectifier 1.5-3.5 A forward current, 70 ns recovery time | VMI | - | 2 | -65°C | 175°C | 264K |
| 25. | 1N6517 | 5000 V rectifier 0.5-2 mA forward current,70 ns recovery time | VMI | - | 2 | -65°C | 175°C | 95K |
| 26. | 1N6517LL | 5000 V rectifier 1.5-3.5 A forward current, 70 ns recovery time | VMI | - | 2 | -65°C | 175°C | 264K |
| 27. | 1N6517U | 5000 V rectifier 2-5 A forward current, 70 ns recovery time | VMI | - | 2 | -65°C | 175°C | 99K |
| 28. | 1N6519 | 10000 V rectifier 0.5-2 mA forward current,70 ns recovery time | VMI | - | 2 | -65°C | 175°C | 95K |
| 29. | 2N6515 | Ic=500mA, Vce=10V transistor | MCC | - | - | - | - | 427K |
| 30. | 2N6515 | High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. | USHA | - | 3 | 0°C | 150°C | 47K |
| 31. | 2N6516 | High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. | USHA | - | 3 | 0°C | 150°C | 69K |
| 32. | 2N6517 | NPN Epitaxial Silicon Transistor - High Voltage Transistor | FAIR | - | - | - | - | 26K |
| 33. | 2N6517 | Ic=500mA, Vce=10V transistor | MCC | - | - | - | - | 427K |
| 34. | 2N6517 | High voltage transistor. Collector-emitter voltage: Vceo = 350V. Collector-base voltage: Vcbo = 350V. Collector dissipation: Pc(max) = 625mW. | USHA | - | 3 | 0°C | 150°C | 47K |
| 35. | 2N6518 | High voltage transistor. Collector-emitter voltage: Vceo = -250V. Collector-base voltage: Vcbo = -250V. Collector dissipation: Pc(max) = 0.625W. | USHA | - | 3 | 0°C | 150°C | 50K |
| 36. | 2N6519 | Ic=500mA, Vce=10V transistor | MCC | - | - | - | - | 427K |
| 37. | 2N6519 | High voltage transistor. Collector-emitter voltage: Vceo = -300V. Collector-base voltage: Vcbo = -300V. Collector dissipation: Pc(max) = 0.625W. | USHA | - | 3 | 0°C | 150°C | 50K |
| 38. | H2N6517 | 500mA NPN epitaxial planar transistor for general purpose applications requiring high breakdown voltages | HSMC | - | 3 | - | - | 41K |
| 39. | SN65176B | Differential BUS transceiver | TI | P | 8 | -40°C | 105°C | 171K |
| 40. | SN65176B | Differential BUS transceiver | TI | P | 8 | -40°C | 105°C | 171K |
