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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 281. | 1N6513U | 2000 V rectifier 2-5 A forward current, 70 ns recovery time | VMI | - | 2 | -65°C | 175°C | 99K |
| 282. | 1N6515U | 3000 V rectifier 2-5 A forward current, 70 ns recovery time | VMI | - | 2 | -65°C | 175°C | 99K |
| 283. | 1N6517U | 5000 V rectifier 2-5 A forward current, 70 ns recovery time | VMI | - | 2 | -65°C | 175°C | 99K |
| 284. | 1N6521U | 2000 V rectifier 0.15-0.5 A forward current, 70 ns recovery time | VMI | - | 2 | -65°C | 175°C | 98K |
| 285. | 1N6523U | 3000 V rectifier 0.15-0.5 A forward current, 70 ns recovery time | VMI | - | 2 | -65°C | 175°C | 98K |
| 286. | 1N6525U | 5000 V rectifier 0.15-0.5 A forward current, 70 ns recovery time | VMI | - | 2 | -65°C | 175°C | 98K |
| 287. | 1N6529U | 2000 V rectifier 0.05-0.25 A forward current, 70 ns recovery time | VMI | - | 2 | -65°C | 175°C | 88K |
| 288. | 2N6517 | NPN silicon planar medium power transistor | ZETEX | - | 3 | -55°C | 200°C | 27K |
| 289. | 2N6517 | NPN silicon planar medium power transistor | ZETEX | - | 3 | -55°C | 200°C | 27K |
| 290. | 2N6520 | PNP silicon planar medium power transistor | ZETEX | - | 3 | -55°C | 200°C | 27K |
| 291. | 2N6520 | PNP silicon planar medium power transistor | ZETEX | - | 3 | -55°C | 200°C | 27K |
| 292. | 2N6542 | 300 V, NPN silicon power transistor | BOCA | TO-3 | 2 | -65°C | 200°C | 216K |
| 293. | 2N6543 | 400 V, NPN silicon power transistor | BOCA | TO-3 | 2 | -65°C | 200°C | 216K |
| 294. | 2N6546 | 300 V, NPN silicon power transistor | BOCA | TO-3 | 2 | -65°C | 200°C | 217K |
| 295. | 2N6547 | 400 V, NPN silicon power transistor | BOCA | TO-3 | 2 | -65°C | 200°C | 217K |
| 296. | 2N6550 | N-Channel silicon junction field-effect transistor | IFET | TO-46 | 4 | - | - | 92K |
| 297. | 2N6564 | 300 V, silicon controlled rectifier | BOCA | - | 3 | - | - | 31K |
| 298. | 2N6594 | 300 V, PNP silicon power transistor | BOCA | TO-3 | 2 | -65°C | 200°C | 160K |
| 299. | IRFB9N65A | HEXFET power MOSFET. VDSS = 650V, RDS(on) = 0.93 Ohm, ID = 8.5A | IRF | - | 3 | -55°C | 150°C | 102K |
| 300. | IRFIB5N65A | HEXFET power MOSFET. VDSS = 650V, RDS(on) = 0.93 Ohm, ID = 5.1 A | IRF | TO-220 FULLPAK | 3 | -55°C | 150°C | 103K |
