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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 21. | MTB2N60E | TMOS E-FET high energy power FET | MOT | DPAK | 4 | -55°C | 150°C | 271K |
| 22. | MTB3N60E | TMOS E-FET high energy power FET D2PAK for surface mount | MOT | DPAK | 4 | -55°C | 150°C | 74K |
| 23. | MTB6N60E | TMOS E-FET high energy power FET D2PAK for surface mount | MOT | DPAK | 4 | -55°C | 150°C | 192K |
| 24. | MTB6N60E1 | TMOS E-FET high energy power FET D2PAK for surface mount | MOT | DPAK | 4 | -55°C | 150°C | 160K |
| 25. | MTD1N60E | TMOS E-FET power field effect transistor D2PAK for surface mount | MOT | DPAK | 4 | -55°C | 150°C | 266K |
| 26. | PHB2N60E | 600 V, power MOS transistor avalanche energy rated | PHLPS | SOT | 3 | -55°C | 150°C | 76K |
| 27. | PHB4N60E | 600 V, power MOS transistor avalanche energy rated | PHLPS | SOT | 3 | -55°C | 150°C | 80K |
| 28. | PHB6N60E | 600 V, power MOS transistor avalanche energy rated | PHLPS | SOT | 3 | -55°C | 150°C | 74K |
| 29. | PHD2N60E | 600 V, power MOS transistor avalanche energy rated | PHLPS | SOT | 3 | -55°C | 150°C | 76K |
| 30. | PHP1N60E | 600 V, power MOS transistor | PHLPS | TO | 3 | - | - | 21K |
| 31. | PHP1N60E | 600 V, power MOS transistor | PHLPS | TO | 3 | - | - | 21K |
| 32. | PHP2N60E | 600 V, power MOS transistor avalanche energy rated | PHLPS | SOT | 3 | -55°C | 150°C | 76K |
| 33. | PHP3N60E | 600 V, power MOS transistor avalanche energy rated | PHLPS | SOT | 3 | -55°C | 150°C | 79K |
| 34. | PHP4N60E | 600 V, power MOS transistor avalanche energy rated | PHLPS | SOT | 3 | -55°C | 150°C | 80K |
| 35. | PHP6N60E | 600 V, power MOS transistor avalanche energy rated | PHLPS | SOT | 3 | -55°C | 150°C | 74K |
| 36. | PHP7N60E | 600 V, power MOS transistor avalanche energy rated | PHLPS | SOT | 3 | -55°C | 150°C | 91K |
| 37. | PHP7N60E | 600 V, power MOS transistor avalanche energy rated | PHLPS | SOT | 3 | -55°C | 150°C | 91K |
| 38. | PHW10N60E | 600 V, power MOS transistor avalanche energy rated | PHLPS | SOT | 3 | -55°C | 150°C | 115K |
| 39. | PHW10N60E | 600 V, power MOS transistor avalanche energy rated | PHLPS | SOT | 3 | -55°C | 150°C | 115K |
| 40. | PHW9N60E | 600 V, power MOS transistor avalanche energy rated | PHLPS | SOT | 3 | -55°C | 150°C | 102K |
