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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 341. | 2N6040 | Darlington complementary silicon power transistor | MOSP | TO-220 | 3 | -65°C | 150°C | 199K |
| 342. | 2N6041 | Darlington complementary silicon power transistor | MOSP | TO-220 | 3 | -65°C | 150°C | 199K |
| 343. | 2N6042 | Darlington complementary silicon power transistor | MOSP | TO-220 | 3 | -65°C | 150°C | 199K |
| 344. | 2N6043 | Darlington complementary silicon power transistor | MOSP | TO-220 | 3 | -65°C | 150°C | 199K |
| 345. | 2N6044 | Darlington complementary silicon power transistor | MOSP | TO-220 | 3 | -65°C | 150°C | 199K |
| 346. | 2N6045 | Darlington complementary silicon power transistor | MOSP | TO-220 | 3 | -65°C | 150°C | 199K |
| 347. | 2N6050 | Darlington complementary silicon power transistor | MOSP | TO-3 | 2 | -65°C | 200°C | 188K |
| 348. | 2N6051 | Darlington complementary silicon power transistor | MOSP | TO-3 | 2 | -65°C | 200°C | 188K |
| 349. | 2N6052 | Darlington complementary silicon power transistor | MOSP | TO-3 | 2 | -65°C | 200°C | 188K |
| 350. | 2N6053 | Darlington complementary silicon power transistor | MOSP | TO-3 | 2 | -65°C | 200°C | 172K |
| 351. | 2N6055 | Darlington complementary silicon power transistor | MOSP | TO-3 | 2 | -65°C | 200°C | 172K |
| 352. | 2N6056 | Darlington complementary silicon power transistor | MOSP | TO-3 | 2 | -65°C | 200°C | 172K |
| 353. | 2N6057 | Darlington complementary silicon power transistor | MOSP | TO-3 | 2 | -65°C | 200°C | 188K |
| 354. | 2N6058 | Darlington complementary silicon power transistor | MOSP | TO-3 | 2 | -65°C | 200°C | 188K |
| 355. | 2N6059 | Darlington complementary silicon power transistor | MOSP | TO-3 | 2 | -65°C | 200°C | 188K |
| 356. | MTB2N60E | TMOS E-FET high energy power FET | MOT | DPAK | 4 | -55°C | 150°C | 271K |
| 357. | MTB3N60E | TMOS E-FET high energy power FET D2PAK for surface mount | MOT | DPAK | 4 | -55°C | 150°C | 74K |
| 358. | MTB6N60E | TMOS E-FET high energy power FET D2PAK for surface mount | MOT | DPAK | 4 | -55°C | 150°C | 192K |
| 359. | MTB6N60E1 | TMOS E-FET high energy power FET D2PAK for surface mount | MOT | DPAK | 4 | -55°C | 150°C | 160K |
| 360. | MTD1N60E | TMOS E-FET power field effect transistor D2PAK for surface mount | MOT | DPAK | 4 | -55°C | 150°C | 266K |
