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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 321. | 1N6095 | Schottky Rectifier | MSEMI | DO-4 | - | - | - | 124K |
| 322. | 1N6096 | Schottky Rectifier | MSEMI | DO-4 | - | - | - | 124K |
| 323. | 1N6097 | Schottky Rectifier | MSEMI | DO-5 | - | - | - | 120K |
| 324. | 1N6098 | Schottky Rectifier | MSEMI | DO-5 | - | - | - | 120K |
| 325. | 1N60A | Germanium Diode | MSEMI | DO-7 | - | - | - | 57K |
| 326. | MGP11N60E | Insulated gate bipolar transistor | MOT | - | 3 | -55°C | 150°C | 123K |
| 327. | MGP14N60E | Insulated gate bipolar transistor | MOT | - | 3 | -55°C | 150°C | 125K |
| 328. | MGP15N60U | Insulated gate bipolar transistor | MOT | - | 3 | -55°C | 150°C | 120K |
| 329. | MGP20N60U | Insulated gate bipolar transistor | MOT | - | 3 | -55°C | 150°C | 120K |
| 330. | MGS05N60D | Insulated gate bipolar transistor | MOT | - | 3 | -55°C | 150°C | 135K |
| 331. | MGW20N60D | Insulated gate bipolar transistor | MOT | TO-247AE | 3 | -55°C | 150°C | 246K |
| 332. | MGW21N60ED | Insulated gate bipolar transistor | MOT | TO-247AE | 3 | -55°C | 150°C | 152K |
| 333. | MGY30N60D | Insulated gate bipolar transistor | MOT | TO-264 | 3 | -55°C | 150°C | 254K |
| 334. | MGY40N60D | Insulated gate bipolar transistor | MOT | TO-264 | 3 | -55°C | 150°C | 247K |
| 335. | MMG05N60D | Insulated gate bipolar transistor | MOT | TO-261AA | 4 | -55°C | 150°C | 135K |
| 336. | MTP1N60E | TMOS E-FET power field effect transistor | MOT | - | 4 | -55°C | 150°C | 232K |
| 337. | MTP2N60E | TMOS E-FET power field effect transistor | MOT | - | 4 | -55°C | 150°C | 219K |
| 338. | MTP3N60E | TMOS E-FET high energy power FET | MOT | - | 4 | -55°C | 150°C | 183K |
| 339. | MTP6N60E | TMOS E-FET power field effect transistor | MOT | - | 4 | -55°C | 150°C | 156K |
| 340. | MTY25N60E | TMOS E-FET power field effect transistor | MOT | TO-264 | 3 | -55°C | 150°C | 236K |
