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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 301. | 1N5817 | 1 Ampere schottky barrier rectifier. Maximum recurrent peak reverse voltage 20V. Maximum average forward rectified current 1.0A | PAJIT | - | 2 | -55°C | 125°C | 98K |
| 302. | 1N5817G | 20 V, 1.0 A schottky barrier rectifier diode | EIC | - | 2 | -65°C | 150°C | 16K |
| 303. | 1N5818 | 1 Ampere schottky barrier rectifier. Maximum recurrent peak reverse voltage 30V. Maximum average forward rectified current 1.0A | PAJIT | - | 2 | -55°C | 125°C | 98K |
| 304. | 1N5819 | 1 Ampere schottky barrier rectifier. Maximum recurrent peak reverse voltage 40V. Maximum average forward rectified current 1.0A | PAJIT | - | 2 | -55°C | 125°C | 98K |
| 305. | 1N5820 | 20 V, 3.0 A schottky barrier rectifier diode | EIC | - | 2 | -65°C | 125°C | 28K |
| 306. | 1N5820 | 3 Ampere schottky barrier rectifier. Maximum recurrent peak reverse voltage 20V. Maximum average forward rectified current 3.0A | PAJIT | - | 2 | -55°C | 125°C | 55K |
| 307. | 1N5820S | 20 V, 3.0 A schottky barrier rectifier diode | EIC | D2A | 2 | -65°C | 125°C | 28K |
| 308. | 1N5821 | 30 V, 3.0 A schottky barrier rectifier diode | EIC | - | 2 | -65°C | 125°C | 28K |
| 309. | 1N5821 | 3 Ampere schottky barrier rectifier. Maximum recurrent peak reverse voltage 30V. Maximum average forward rectified current 3.0A | PAJIT | - | 2 | -55°C | 125°C | 55K |
| 310. | 1N5821S | 30 V, 3.0 A schottky barrier rectifier diode | EIC | D2A | 2 | -65°C | 125°C | 28K |
| 311. | 1N5822 | 40 V, 3.0 A schottky barrier rectifier diode | EIC | - | 2 | -65°C | 125°C | 28K |
| 312. | 1N5822 | 3 Ampere schottky barrier rectifier. Maximum recurrent peak reverse voltage 40V. Maximum average forward rectified current 3.0A | PAJIT | - | 2 | -55°C | 125°C | 55K |
| 313. | 1N5822S | 40 V, 3.0 A schottky barrier rectifier diode | EIC | D2A | 2 | -65°C | 125°C | 28K |
| 314. | 2N5884 | hfe min 20 Transistor polarity PNP Current Ic continuous max 25 A Voltage Vceo 80 V Current Ic (hfe) 10 A Power Ptot 200 W Temperature power 25 ?C Transistors number of 1 | STM | TO-3 | - | - | - | 68K |
| 315. | TC54VN5801ECB | Voltage detector. Detected voltage 5.8V. Output form: Nch open drain. Tolerance +-1.0%. | TCOM | SOT-23A | 3 | -40°C | 85°C | 50K |
| 316. | TC54VN5801ECTTR | Voltage detector, Nch open drain, 5.8V, +/-1% | MCHIP | SOT-23A | 5 | -40°C | 85°C | 215K |
| 317. | TC54VN5801EMB | Voltage detector. Detected voltage 5.8V. Output form: Nch open drain. Tolerance +-1.0%. | TCOM | SOT-89 | 3 | -40°C | 85°C | 50K |
| 318. | TC54VN5801EZB | Voltage detector. Detected voltage 5.8V. Output form: Nch open drain. Tolerance +-1.0%. | TCOM | - | 3 | -40°C | 85°C | 50K |
| 319. | TC54VN5802ECB | Voltage detector. Detected voltage 5.8V. Output form: Nch open drain. Tolerance +-2.0%. | TCOM | SOT-23A | 3 | -40°C | 85°C | 50K |
| 320. | TC54VN5802EMB | Voltage detector. Detected voltage 5.8V. Output form: Nch open drain. Tolerance +-2.0%. | TCOM | SOT-89 | 3 | -40°C | 85°C | 50K |
