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Found: 450      Displaying: 181 - 200
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
181.
1N5817Schottky barrier rectifier
MOSP
-
2
-65°C
125°C
181K
182.
1N5818Schottky barrier rectifier
MOSP
-
2
-65°C
125°C
181K
183.
1N5819Schottky barrier rectifier
MOSP
-
2
-65°C
125°C
181K
184.
1N5820Schottky barrier rectifier
MOSP
-
2
-65°C
125°C
230K
185.
1N5821Schottky barrier rectifier
MOSP
-
2
-65°C
125°C
230K
186.
1N5822Schottky barrier rectifier
MOSP
-
2
-65°C
125°C
230K
187.
2N5875Complementary silicon high-power transistor
MOSP
TO-3
2
-65°C
200°C
124K
188.
2N5876Complementary silicon high-power transistor
MOSP
TO-3
2
-65°C
200°C
124K
189.
2N5877Complementary silicon high-power transistor
MOSP
TO-3
2
-65°C
200°C
124K
190.
2N5878Complementary silicon high-power transistor
MOSP
TO-3
2
-65°C
200°C
124K
191.
2N5879Complementary silicon high-power transistor
MOSP
TO-3
2
-65°C
200°C
180K
192.
2N5880Complementary silicon high-power transistor
MOSP
TO-3
2
-65°C
200°C
180K
193.
2N5881Complementary silicon high-power transistor
MOSP
TO-3
2
-65°C
200°C
180K
194.
2N5882Complementary silicon high-power transistor
MOSP
TO-3
2
-65°C
200°C
180K
195.
2N5883Complementary silicon high-power transistor
MOSP
TO-3
2
-65°C
200°C
183K
196.
2N5884Complementary silicon high-power transistor
MOSP
TO-3
2
-65°C
200°C
183K
197.
2N5885Complementary silicon high-power transistor
MOSP
TO-3
2
-65°C
200°C
183K
198.
2N5886Complementary silicon high-power transistor
MOSP
TO-3
2
-65°C
200°C
183K
199.
R1110N581ATRLow noise 150mA L.D.O. regulator. Output voltage 5.8V. "L" active type. Standard taping specification TR.
RICOH
SOT-23
5
-40°C
85°C
177K
200.
R1110N581BTRLow noise 150mA L.D.O. regulator. Output voltage 5.8V. "H" active type. Standard taping specification TR.
RICOH
SOT-23
5
-40°C
85°C
177K
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