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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1201. | 1N5400 | 50V; 3.0A rectifier; high current capability and low forward voltage drop | DIODS | - | 2 | -65°C | 175°C | 62K |
| 1202. | 1N5400G | 50V; 3.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage drop | DIODS | - | 2 | -65°C | 150°C | 59K |
| 1203. | 1N5401 | 100V; 3.0A rectifier; high current capability and low forward voltage drop | DIODS | - | 2 | -65°C | 175°C | 62K |
| 1204. | 1N5401G | 100V; 3.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage drop | DIODS | - | 2 | -65°C | 150°C | 59K |
| 1205. | 1N5402 | 200V; 3.0A rectifier; high current capability and low forward voltage drop | DIODS | - | 2 | -65°C | 175°C | 62K |
| 1206. | 1N5402G | 200V; 3.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage drop | DIODS | - | 2 | -65°C | 150°C | 59K |
| 1207. | 1N5402GP | 3.0A, 200V ultra fast recovery rectifier | MCC | - | - | - | - | 78K |
| 1208. | 1N5403G | 300V; 3.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage drop | DIODS | - | 2 | -65°C | 150°C | 59K |
| 1209. | 1N5404 | 400V; 3.0A rectifier; high current capability and low forward voltage drop | DIODS | - | 2 | -65°C | 175°C | 62K |
| 1210. | 1N5404G | 400V; 3.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage drop | DIODS | - | 2 | -65°C | 150°C | 59K |
| 1211. | 1N5404GP | 3.0A, 400V ultra fast recovery rectifier | MCC | - | - | - | - | 78K |
| 1212. | 1N5405G | 500V; 3.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage drop | DIODS | - | 2 | -65°C | 150°C | 59K |
| 1213. | 1N5406 | 600V; 3.0A rectifier; high current capability and low forward voltage drop | DIODS | - | 2 | -65°C | 175°C | 62K |
| 1214. | 1N5406G | 600V; 3.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage drop | DIODS | - | 2 | -65°C | 150°C | 59K |
| 1215. | 1N5407 | 800V; 3.0A rectifier; high current capability and low forward voltage drop | DIODS | - | 2 | -65°C | 175°C | 62K |
| 1216. | 1N5407 | 800V; 3.0A rectifier; high current capability and low forward voltage drop | DIODS | - | 2 | -65°C | 175°C | 62K |
| 1217. | 1N5407G | 700V; 3.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage drop | DIODS | - | 2 | -65°C | 150°C | 59K |
| 1218. | 1N5408 | 1000V; 3.0A rectifier; high current capability and low forward voltage drop | DIODS | - | 2 | -65°C | 175°C | 62K |
| 1219. | 1N5408G | 800V; 3.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage drop | DIODS | - | 2 | -65°C | 150°C | 59K |
| 1220. | H2N5401 | 600mA PNP epitaxial planar transistor for general purpose applications requiring high breakdown voltage | HSMC | - | 3 | - | - | 38K |
