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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 21. | 1N4447 | Small signal switching diode. Peak reverse voltage VRM = 100 V. Maximum average rectified current IAV = 150 mA. | CNEL | DO-35 | 2 | -65°C | 175°C | 47K |
| 22. | 1N4447 | Small signal switching diode. Peak reverse voltage VRM = 100 V. Maximum average rectified current IAV = 150 mA. | CNEL | DO-34 | 2 | -65°C | 175°C | 47K |
| 23. | 1N4447 | 100 V, 150 mA, Silicon epitaxial planar diode | GODAR | DO-34 | 2 | - | - | 23K |
| 24. | 1N4448 | Small signal switching diode. Reverse voltage 75 V. Average rectified current 150 mA. | CNEL | DO-35 | 2 | -65°C | 175°C | 190K |
| 25. | 1N4448 | 100V; fast switching diode. General purpose rectification | DIODS | DO-35 | 2 | -65°C | 200°C | 57K |
| 26. | 1N4448 | 100 V, high-speed switching diode | FORMO | - | 2 | - | - | 323K |
| 27. | 1N4448 | 75 V, 150mA, Silicon epitaxial planar diode | GODAR | DO | 2 | - | - | 235K |
| 28. | 1N4448W | 100V; fast switching surface mount diode. For general purpose switching applications | DIODS | SOD-123 | 2 | -65°C | 150°C | 73K |
| 29. | 1N4448W | Surface mount switching diode. Peak reverse voltage 100V. Maximum average forward current at Ta = 25degC.150mA | PAJIT | SOD-123 | 2 | -55°C | 125°C | 53K |
| 30. | 1N4448W | 100 V, fast switching surface mount diode | TRSYS | SOD-123 | 2 | -65°C | 150°C | 111K |
| 31. | 1N4448WS | Surface mount switching diode. Voltage 75V. Power 200mW. Peak reverse voltage 100V. | PAJIT | SOD-323 | 2 | -55°C | 125°C | 127K |
| 32. | 1N4448WS-T1 | 75V surface mount fast switching diode | WTE | SOD-323 | 2 | -65°C | 150°C | 40K |
| 33. | 1N4448WS-T1 | 75V surface mount fast switching diode | WTE | SOD-323 | 2 | -65°C | 150°C | 40K |
| 34. | 1N4448WS-T1 | 75V surface mount fast switching diode | WTE | SOD-323 | 2 | -65°C | 150°C | 40K |
| 35. | 1N4448WS-T3 | 75V surface mount fast switching diode | WTE | SOD-323 | 2 | -65°C | 150°C | 40K |
| 36. | 1N4448WS-T3 | 75V surface mount fast switching diode | WTE | SOD-323 | 2 | -65°C | 150°C | 40K |
| 37. | 1N4449 | Small signal switching diode. Peak reverse voltage VRM = 100 V. Maximum average rectified current IAV = 150 mA. | CNEL | DO-35 | 2 | -65°C | 175°C | 47K |
| 38. | 1N4449 | Small signal switching diode. Peak reverse voltage VRM = 100 V. Maximum average rectified current IAV = 150 mA. | CNEL | DO-34 | 2 | -65°C | 175°C | 47K |
| 39. | 1N4449 | 100 V, 150 mA, Silicon epitaxial planar diode | GODAR | DO-34 | 2 | - | - | 23K |
| 40. | 2N4449 | Chip: geometry 0005; polarity NPN | SECOA | - | - | - | - | 30K |
