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Found: 358      Displaying: 241 - 260
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
241.
1N4448Signal diode. Breakdown voltage BV = 75V(IR = 5.0uA) BV = 100V(IR = 100uA).
RECTR
DO-35
2
-65°C
175°C
11M
242.
1N4448Signal diode. Breakdown voltage BV = 75V(IR = 5.0uA) BV = 100V(IR = 100uA).
RECTR
DO-35
2
-65°C
175°C
11M
243.
1N4454Signal diode. Breakdown voltage BV = 75V(IR = 5.0uA) BV = 100V(IR = 100uA).
RECTR
DO-35
2
-65°C
175°C
11M
244.
1N44606.2 Volt, 1.5 Watt zener diode
CDIDI
D5-A
2
-65°C
175°C
107K
245.
1N4460US6.2 Volt, 1.5 Watt zener diode
CDIDI
D5-A
-
-65°C
175°C
107K
246.
1N44616.8 Volt, 1.5 Watt zener diode
CDIDI
D5-A
2
-65°C
175°C
107K
247.
1N4461US6.8 Volt, 1.5 Watt zener diode
CDIDI
D5-A
-
-65°C
175°C
107K
248.
2N4400500mW NPN silicon planar epitaxial transistor
ME
TO-92A
3
-55°C
150°C
182K
249.
2N4401500mW NPN silicon planar epitaxial transistor
ME
TO-92A
3
-55°C
150°C
182K
250.
2N4402500mW PNP silicon planar epitaxial transistor
ME
TO-92A
3
-55°C
150°C
189K
251.
2N4403500mW PNP silicon planar epitaxial transistor
ME
TO-92A
3
-55°C
150°C
189K
252.
2N4416N-Channel silicon junction field-effect transistor
IFET
TO-72
4
-
-
66K
253.
2N4416500mW N-cnhannel FET
ME
TO-72
3
-65°C
200°C
140K
254.
2N4416AN-Channel silicon junction field-effect transistor
IFET
TO-72
4
-
-
66K
255.
2N4416A500mW N-cnhannel FET
ME
TO-72
3
-65°C
200°C
140K
256.
DE475-501N44ARF power MOSFET
DEI
-
6
-55°C
150°C
82K
257.
ZVN4424GN-channel enhancement mode vertical DMOS FET
ZETEX
SOT
3
-55°C
150°C
43K
258.
ZVN4424GN-channel enhancement mode vertical DMOS FET
ZETEX
SOT
3
-55°C
150°C
43K
259.
ZVN4424ZN-channel enhancement mode vertical DMOS FET
ZETEX
SOT
3
-55°C
150°C
69K
260.
ZVN4424ZN-channel enhancement mode vertical DMOS FET
ZETEX
SOT
3
-55°C
150°C
69K
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