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GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.

Found: 813      Displaying: 441 - 460
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
441.
1N41481N4148 signal diode. Breakdown voltage BV = 75V(IR = 5.0uA), BV = 100V(IR = 100uA)
RECTR
DO-35
2
-65°C
175°C
11M
442.
1N41501N4150 signal diode. Breakdown voltage BV = 50V(IR = 5.0uA).
RECTR
DO-35
2
-65°C
200°C
16K
443.
1N4151Signal diode. Breakdown voltage BV = 75V(IR = 5.0uA).
RECTR
DO-35
2
-65°C
175°C
11M
444.
1N415375 volt switching diode
CDIDI
DO-35
2
-65°C
175°C
30K
445.
1N4153-175 volt switching diode
CDIDI
DO-35
2
-65°C
175°C
30K
446.
2N4117N-Channel silicon junction field-effect transistor
IFET
TO-72
4
-
-
91K
447.
2N4117Ultra-high input impedance N-channel JFET
LISYS
TO-72
4
-65°C
175°C
10M
448.
2N4117AN-Channel silicon junction field-effect transistor
IFET
TO-72
4
-
-
91K
449.
2N4117AUltra-high input impedance N-channel JFET
LISYS
TO-72
4
-65°C
175°C
10M
450.
2N4118N-Channel silicon junction field-effect transistor
IFET
TO-72
4
-
-
91K
451.
2N4118Ultra-high input impedance N-channel JFET
LISYS
TO-72
4
-65°C
175°C
10M
452.
2N4118AN-Channel silicon junction field-effect transistor
IFET
TO-72
4
-
-
91K
453.
2N4118AUltra-high input impedance N-channel JFET
LISYS
TO-72
4
-65°C
175°C
10M
454.
2N4119N-Channel silicon junction field-effect transistor
IFET
TO-72
4
-
-
91K
455.
2N4119Ultra-high input impedance N-channel JFET
LISYS
TO-72
4
-65°C
175°C
10M
456.
2N4119AN-Channel silicon junction field-effect transistor
IFET
TO-72
4
-
-
91K
457.
2N4119AUltra-high input impedance N-channel JFET
LISYS
TO-72
4
-65°C
175°C
10M
458.
2N4123200mW NPN silicon planar epixial transistor
ME
TO-92A
3
-
-
85K
459.
FN4117Ultra-high input impedance N-channel JFET
LISYS
TO-72
4
-65°C
175°C
10M
460.
FN4117AUltra-high input impedance N-channel JFET
LISYS
TO-72
4
-65°C
175°C
10M
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