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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 221. | 1N4001 | Plastic silicon rectifier. Max recurrent peak reverse voltage 50 V. Max average forward rectified current 1.0 A. | PAJIT | - | 2 | -55°C | 150°C | 53K |
| 222. | 1N4001G | 50 V, 1.0 A silicon rectifier | EIC | - | 2 | -65°C | 175°C | 16K |
| 223. | 1N4001G | 50 V, 1 A, Glass passivated junction rectifier | GODAR | DO | 2 | -65°C | 175°C | 171K |
| 224. | 1N4001S | Plastic silicon rectifier. Max recurrent peak reverse voltage 50 V. Max average forward rectified current 1.0 A. | PAJIT | A-405 | 2 | -55°C | 150°C | 53K |
| 225. | 1N4002 | Plastic silicon rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified current 1.0 A. | PAJIT | - | 2 | -55°C | 150°C | 53K |
| 226. | 1N4002G | 100 V, 1.0 A silicon rectifier | EIC | - | 2 | -65°C | 175°C | 16K |
| 227. | 1N4002G | 100 V, 1 A, Glass passivated junction rectifier | GODAR | DO | 2 | -65°C | 175°C | 171K |
| 228. | 1N4003 | Plastic silicon rectifier. Max recurrent peak reverse voltage 200 V. Max average forward rectified current 1.0 A. | PAJIT | - | 2 | -55°C | 150°C | 53K |
| 229. | 1N4003G | 200 V, 1.0 A silicon rectifier | EIC | - | 2 | -65°C | 175°C | 16K |
| 230. | 1N4003G | 200 V, 1 A, Glass passivated junction rectifier | GODAR | DO | 2 | -65°C | 175°C | 171K |
| 231. | 1N4004 | Plastic silicon rectifier. Max recurrent peak reverse voltage 400 V. Max average forward rectified current 1.0 A. | PAJIT | - | 2 | -55°C | 150°C | 53K |
| 232. | 1N4004G | 400 V, 1.0 A silicon rectifier | EIC | - | 2 | -65°C | 175°C | 16K |
| 233. | 1N4005 | Plastic silicon rectifier. Max recurrent peak reverse voltage 600 V. Max average forward rectified current 1.0 A. | PAJIT | - | 2 | -55°C | 150°C | 53K |
| 234. | 1N4005G | 600 V, 1.0 A silicon rectifier | EIC | - | 2 | -65°C | 175°C | 16K |
| 235. | 1N4006G | 800 V, 1.0 A silicon rectifier | EIC | - | 2 | -65°C | 175°C | 16K |
| 236. | 1N4007 | Plastic silicon rectifier. Max recurrent peak reverse voltage 1000 V. Max average forward rectified current 1.0 A. | PAJIT | - | 2 | -55°C | 150°C | 53K |
| 237. | 1N4007G | 1000 V, 1.0 A silicon rectifier | EIC | - | 2 | -65°C | 175°C | 16K |
| 238. | TC54VN4001ECBTR | Voltage detector, Nch output, 4.0V, +/-1% | MCHIP | SOT-23A | 3 | -40°C | 85°C | 215K |
| 239. | TC54VN4001ECTTR | Voltage detector, Nch open drain, 4.0V, +/-1% | MCHIP | SOT-23A | 5 | -40°C | 85°C | 215K |
| 240. | TC54VN4001EMBTR | Voltage detector, Nch open drain, 4.0V, +/-1% | MCHIP | SOT-89 | 3 | -40°C | 85°C | 215K |
