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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 381. | 1N4003G | Glass passivated junction plastic rectifier. Current 1.0A, VRRM = 200V, VRMS = 140V, VDC = 200V. | RECTR | - | 2 | -65°C | 175°C | 23K |
| 382. | 1N4004G | Glass passivated junction plastic rectifier. Current 1.0A, VRRM = 400V, VRMS = 280V, VDC = 400V. | RECTR | - | 2 | -65°C | 175°C | 23K |
| 383. | 1N4005G | Glass passivated junction plastic rectifier. Current 1.0A, VRRM = 600V, VRMS = 420V, VDC = 600V. | RECTR | - | 2 | -65°C | 175°C | 23K |
| 384. | 1N4006G | Glass passivated junction plastic rectifier. Current 1.0A, VRRM = 800V, VRMS = 560V, VDC = 800V. | RECTR | - | 2 | -65°C | 175°C | 23K |
| 385. | 1N4007G | Glass passivated junction plastic rectifier. Current 1.0A, VRRM = 1000V, VRMS = 700V, VDC = 1000V. | RECTR | - | 2 | -65°C | 175°C | 23K |
| 386. | 2N4029 | 800mW PNP silicon planar epitaxial transistor | ME | - | 3 | -65°C | 150°C | 39K |
| 387. | 2N4030 | 800mW PNP silicon AF medium power amplifier | ME | TO-39 | 3 | -65°C | 200°C | 143K |
| 388. | 2N4032 | 800mW PNP silicon AF medium power amplifier | ME | TO-39 | 3 | -65°C | 200°C | 143K |
| 389. | 2N4036 | Complementary silicon AF medium power amplifier | ME | TO-39 | 3 | -65°C | 200°C | 147K |
| 390. | 2N4058 | 360mW PNP silicon general purpose AF transistor | ME | TO-92B | 3 | -55°C | 150°C | 137K |
| 391. | 2N4059 | 360mW PNP silicon general purpose AF transistor | ME | TO-92B | 3 | -55°C | 150°C | 137K |
| 392. | 2N4060 | 360mW PNP silicon general purpose AF transistor | ME | TO-92B | 3 | -55°C | 150°C | 137K |
| 393. | 2N4061 | 360mW PNP silicon general purpose AF transistor | ME | TO-92B | 3 | -55°C | 150°C | 137K |
| 394. | 2N4062 | 360mW PNP silicon general purpose AF transistor | ME | TO-92B | 3 | -55°C | 150°C | 137K |
| 395. | RL1N4001 | Silicon rectifier. Max recurrent peak reverse voltage 50V, max RMS voltage 35V, max DC blocking voltage 50V. Max average forward current 1.0A at Ta=55degC. | RECTR | A-405 | 2 | -65°C | 175°C | 23K |
| 396. | RL1N4002 | Silicon rectifier. Max recurrent peak reverse voltage 100V, max RMS voltage 70V, max DC blocking voltage 100V. Max average forward current 1.0A at Ta=55degC. | RECTR | A-405 | 2 | -65°C | 175°C | 23K |
| 397. | RL1N4004 | Silicon rectifier. Max recurrent peak reverse voltage 400V, max RMS voltage 280V, max DC blocking voltage 400V. Max average forward current 1.0A at Ta=55degC. | RECTR | A-405 | 2 | -65°C | 175°C | 23K |
| 398. | RL1N4005 | Silicon rectifier. Max recurrent peak reverse voltage 600V, max RMS voltage 420V, max DC blocking voltage 600V. Max average forward current 1.0A at Ta=55degC. | RECTR | A-405 | 2 | -65°C | 175°C | 23K |
| 399. | RL1N4006 | Silicon rectifier. Max recurrent peak reverse voltage 800V, max RMS voltage 560V, max DC blocking voltage 800V. Max average forward current 1.0A at Ta=55degC. | RECTR | A-405 | 2 | -65°C | 175°C | 23K |
| 400. | RL1N4007 | Silicon rectifier. Max recurrent peak reverse voltage 1000V, max RMS voltage 700V, max DC blocking voltage 1000V. Max average forward current 1.0A at Ta=55degC. | RECTR | A-405 | 2 | -65°C | 175°C | 23K |
