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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 321. | 2N3019 | 800mW NPN silicon AF medium power transistor | ME | TO-39 | 3 | - | - | 144K |
| 322. | 2N3020 | 800mW NPN silicon AF medium power transistor | ME | TO-39 | 3 | - | - | 144K |
| 323. | 2N3053 | Silicon planar epitaxial transistor | ME | TO-39 | 3 | -65°C | 200°C | 203K |
| 324. | 2N3053 | Silicon planar epitaxial transistor | ME | TO-92A | 3 | -65°C | 200°C | 203K |
| 325. | 2N3057 | Silicon planar epitaxial transistor | ME | TO-39 | 3 | -65°C | 200°C | 203K |
| 326. | 2N3057 | Silicon planar epitaxial transistor | ME | TO-92A | 3 | -65°C | 200°C | 203K |
| 327. | HVP080N3000 | 3 mA, high voltage power supply | VMI | - | 3 | 0°C | 50°C | 165K |
| 328. | IRFB9N30A | HEXFET power MOSFET. VDSS = 300V, RDS(on) = 0.45 Ohm, ID = 9.3A | IRF | - | 3 | -55°C | 150°C | 137K |
| 329. | IXFH40N30Q | 300V HiPerFET power MOSFET Q-class | IXYS | TO-247 | 3 | -55°C | 150°C | 52K |
| 330. | IXFH52N30Q | 300V HiPerFET power MOSFET Q-class | IXYS | TO-247 | 3 | -55°C | 150°C | 70K |
| 331. | IXFT40N30Q | 300V HiPerFET power MOSFET Q-class | IXYS | TO-268 | 3 | -55°C | 150°C | 52K |
| 332. | IXFT52N30Q | 300V HiPerFET power MOSFET Q-class | IXYS | TO-268 | 3 | -55°C | 150°C | 70K |
| 333. | IXGH40N30A | 300V HiPerFAST IGBT | IXYS | TO-247 | 3 | -55°C | 150°C | 94K |
| 334. | IXGH40N30AS | 300V HiPerFAST IGBT | IXYS | TO-247 | 3 | -55°C | 150°C | 94K |
| 335. | IXGH40N30B | 300V HiPerFAST IGBT | IXYS | TO-247 | 3 | -55°C | 150°C | 94K |
| 336. | IXGH40N30BS | 300V HiPerFAST IGBT | IXYS | TO-247 | 3 | -55°C | 150°C | 94K |
| 337. | IXGH40N30S | 300V HiPerFAST IGBT | IXYS | TO-247 | 3 | -55°C | 150°C | 94K |
| 338. | OHN3040U | Hallogic hall effect sensor | OPTEK | Silicon chip | 3 | -20°C | 85°C | 287K |
| 339. | OHN3075U | Hallogic hall effect sensor | OPTEK | Silicon chip | 3 | -20°C | 85°C | 299K |
| 340. | PN3053 | 1W PNP complementary silicon transistor | ME | TO-39 | 3 | -65°C | 200°C | 203K |
