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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 321. | 1N201G | General purpose plastic rectifier. Max repetitive peak reverse voltage Vrrm = 50 V. Max average forward rectified current I(av) = 2.0 A | CNEL | DO-15 | 2 | 50°C | 175°C | 141K |
| 322. | 1N202G | General purpose plastic rectifier. Max repetitive peak reverse voltage Vrrm = 100 V. Max average forward rectified current I(av) = 2.0 A | CNEL | DO-15 | 2 | 50°C | 175°C | 141K |
| 323. | 1N203G | General purpose plastic rectifier. Max repetitive peak reverse voltage Vrrm = 300 V. Max average forward rectified current I(av) = 2.0 A | CNEL | DO-15 | 2 | 50°C | 175°C | 141K |
| 324. | 1N205G | General purpose plastic rectifier. Max repetitive peak reverse voltage Vrrm = 600 V. Max average forward rectified current I(av) = 2.0 A | CNEL | DO-15 | 2 | 50°C | 175°C | 141K |
| 325. | 1N206G | General purpose plastic rectifier. Max repetitive peak reverse voltage Vrrm = 200 V. Max average forward rectified current I(av) = 2.0 A | CNEL | DO-15 | 2 | 50°C | 175°C | 141K |
| 326. | 1N207G | General purpose plastic rectifier. Max repetitive peak reverse voltage Vrrm = 1000 V. Max average forward rectified current I(av) = 2.0 A | CNEL | DO-15 | 2 | 50°C | 175°C | 141K |
| 327. | IXFH60N20F | 200V HiPerRF power MOSFET | IXYS | TO-247AD | 3 | -55°C | 150°C | 104K |
| 328. | IXFK90N20Q | 200V HiPerFET power MOSFET Q-class | IXYS | TO-264AA | 3 | -40°C | 150°C | 100K |
| 329. | IXFR80N20Q | 200V HiPerFET power MOSFET Q-class | IXYS | ISOPLUS247 | 3 | -55°C | 150°C | 35K |
| 330. | IXFT60N20F | 200V HiPerRF power MOSFET | IXYS | TO-268 | 3 | -55°C | 150°C | 104K |
| 331. | IXFT80N20Q | 200V HiPerFET power MOSFET Q-class | IXYS | TO-268 | 3 | -55°C | 150°C | 70K |
| 332. | IXFX90N20Q | 200V HiPerFET power MOSFET Q-class | IXYS | ISOPLUS247 | 3 | -40°C | 150°C | 100K |
| 333. | IXGN200N60N | 600V HiPerFAST IGBT | IXYS | SOT-227B | 4 | -55°C | 150°C | 67K |
| 334. | SSP45N20B | 200V, 35A N-channel MOSFET | FAIR | TO-220 | 3 | -55°C | 150°C | 914K |
| 335. | SSS45N20B | 200V, 35A N-channel MOSFET | FAIR | TO-220F | 3 | -55°C | 150°C | 914K |
| 336. | TC54VN2001ECBTR | Voltage detector, Nch output, 2.0V, +/-1% | MCHIP | SOT-23A | 3 | -40°C | 85°C | 215K |
| 337. | TC54VN2001EMBTR | Voltage detector, Nch open drain, 2.0V, +/-1% | MCHIP | SOT-89 | 3 | -40°C | 85°C | 215K |
| 338. | ULN2003 | High-voltage, high-current darlington array. Input voltage Vin=30V,max. Continuous input current Iin=25mA,max. | CNTK | SOP | 16 | -20°C | 85°C | 261K |
| 339. | ULN2003 | High-voltage, high-current darlington array. Input voltage Vin=30V,max. Continuous input current Iin=25mA,max. | CNTK | DIP | 16 | -20°C | 85°C | 261K |
| 340. | VN20N | Power Ptot 100 W Resistance Rds on 0.05 R Voltage Vds typ. 60 V Voltage ESD breakdown 2 kV Temperature current 25 ?C Current output + max. 33 A Voltage Vcc max 26 V Voltage Vcc min 7 V | STM | Pentawatt | - | - | - | 193K |
