We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet.com is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
All Data provided on this web site and the associated web pages is provided as is. It is intended to be for general information only, and is thus provided without any express or implied warranty or guarantee. It is the responsibility of the user or reader to ensure and confirm that this information is accurate and correct with the original publisher of the data sheet.
Most of the data sheets below are in the "pdf" format so it would be adviseable to use Adobe Acrobat Reader.
| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 201. | MTB1N100E | TMOS E-FET high energy power FET | MOT | DPAK | 4 | -55°C | 150°C | 256K |
| 202. | MTB33N10E | TMOS E-FET high energy power FET | MOT | DPAK | 4 | -55°C | 150°C | 266K |
| 203. | MTB3N100E | TMOS E-FET high energy power FET D2PAK for surface mount | MOT | DPAK | 4 | -55°C | 150°C | 262K |
| 204. | MTB40N10E | TMOS E-FET power field effect transistor | MOT | DPAK | 4 | -55°C | 150°C | 192K |
| 205. | MTD6N10E | TMOS E-FET power field effect transistor D2PAK for surface mount | MOT | DPAK | 4 | -55°C | 150°C | 211K |
| 206. | MTD9N10E | TMOS E-FET power field effect transistor D2PAK for surface mount | MOT | DPAK | 4 | -55°C | 150°C | 257K |
| 207. | MTE215N10E | ISOTOP TMOS E-FET power field effect transistor | MOT | SOT | 4 | -40°C | 150°C | 226K |
| 208. | MTP10N10E | TMOS IV power field effect transistor | MOT | - | 4 | -65°C | 150°C | 237K |
| 209. | MTP10N10EL | Logic level TMOS E-FET power field effect transistor | MOT | - | 4 | -55°C | 150°C | 221K |
| 210. | MTP12N10E | TMOS E-FET power field effect transistor | MOT | - | 4 | -55°C | 170°C | 239K |
| 211. | MTP1N100E | TMOS E-FET power field effect transistor | MOT | - | 4 | -55°C | 150°C | 203K |
| 212. | MTP27N10E | TMOS E-FET power field effect transistor | MOT | - | 4 | -55°C | 150°C | 230K |
| 213. | MTP33N10E | TMOS E-FET power field effect transistor | MOT | - | 4 | -55°C | 150°C | 240K |
| 214. | MTP3N100E | TMOS E-FET power field effect transistor | MOT | - | 4 | -55°C | 150°C | 206K |
| 215. | MTP40N10E | TMOS E-FET power field effect transistor | MOT | - | 4 | -55°C | 150°C | 160K |
| 216. | MTV10N100E | TMOS E-FET power field effect transistor D3PAK for surface mount | MOT | DPAK | 4 | -55°C | 150°C | 269K |
| 217. | MTV6N100E | TMOS E-FET power field effect transistor D3PAK for surface mount | MOT | DPAK | 4 | -55°C | 150°C | 262K |
| 218. | MTW10N100E | TMOS E-FET power field effect transistor TO-247 with isolated mounting hole | MOT | TO-247AE | 4 | -55°C | 150°C | 192K |
| 219. | MTW33N10E | TMOS E-FET power field effect transistor TO-247 with isolated mounting hole | MOT | TO-247AE | 4 | -55°C | 150°C | 227K |
| 220. | PRN10320331/151G | Thin film differential terminator resistor network | CAMD | SOIC | 20 | -55°C | 150°C | 79K |
