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Found: 312      Displaying: 181 - 200
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
181.
PHB11N06LT55 V, N-channel trenchMOS transistor logic level FET
PHLPS
SOT
3
-55°C
175°C
114K
182.
PHB125N06LT55 V, trenchMOS transistor logic level FET
PHLPS
SOT
3
-55°C
175°C
56K
183.
PHB20N06T55 V, N-channel trenchMOS transistor
PHLPS
SOT
3
-55°C
175°C
334K
184.
PHB21N06LT55 V, N-channel trenchMOS transistor logic level FET
PHLPS
SOT
3
-55°C
175°C
114K
185.
PHD11N06LT55 V, N-channel trenchMOS transistor logic level FET
PHLPS
SOT
3
-55°C
175°C
114K
186.
PHD20N06T55 V, N-channel trenchMOS transistor
PHLPS
SOT
3
-55°C
175°C
307K
187.
PHD21N06LT55 V, N-channel trenchMOS transistor logic level FET
PHLPS
SOT
3
-55°C
175°C
114K
188.
PHP11N06LT55 V, N-channel trenchMOS transistor logic level FET
PHLPS
SOT
3
-55°C
175°C
114K
189.
PHP20N06T55 V, N-channel trenchMOS transistor
PHLPS
SOT
3
-55°C
175°C
334K
190.
PHP21N06LT55 V, N-channel trenchMOS transistor logic level FET
PHLPS
SOT
3
-55°C
175°C
114K
191.
RF1S30N06LETRANSISTOR MOSFET
FAIR
-
-
-
-
91K
192.
RF1S70N06SMTRANSISTOR MOSFET
FAIR
-
-
-
-
90K
193.
RFD4N06LPower dissipation 30 W Transistor polarity N Channel Current Id cont. 4 A Current Idm pulse 10 A Voltage Vgs th max. 2.5 V (I-Pak) Voltage Vds max 60 V Resistance Rds on 0.6 R Temperature current 25 ?C
FAIR
TO-251
-
-
-
38K
194.
RLD03N06CLEPower dissipation 30 W Transistor polarity N Channel Current Id cont. 0.3 A Voltage Vgs th max. 2.5 V (I-Pak) Voltage Vds max 30 V Resistance Rds on 6 R Voltage ESD breakdown 2 kV Current limit (max) 420 mA
FAIR
TO-251
-
-
-
188K
195.
TN0610N5100V N-channel enhancement-mode vertical DMOS FET
SUTEX
TO-220
3
-55°C
150°C
31K
196.
TN0620N3100V N-channel enhancement-mode vertical DMOS FET
SUTEX
-
3
-55°C
150°C
27K
197.
TN0620N5100V N-channel enhancement-mode vertical DMOS FET
SUTEX
TO-220
3
-55°C
150°C
27K
198.
VN0605TN-Channel enhancement-mode MOS transistor
CALOG
SOT-23
3
-55°C
150°C
23K
199.
VN0606L60V N-channel enhancement-mode vertical DMOS FET
SUTEX
-
3
-55°C
150°C
434K
200.
VN0610LLN-Channel enhancement-mode MOS transistor
CALOG
-
3
-55°C
150°C
24K
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