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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 201. | HMJE13003 | Emitter to base voltage:9V; 1.5A NPN epitaxial planar transistor | HSMC | TO-126 | 3 | - | - | 38K |
| 202. | HMJE13003D | Emitter to base voltage:9V; 1.5A NPN epitaxial planar transistor | HSMC | TO-126ML | 3 | - | - | 44K |
| 203. | HMJE13003T | Emitter to base voltage:8V; 1A NPN epitaxial planar transistor for high voltage | HSMC | TO-126 | 3 | - | - | 38K |
| 204. | HMJE13005 | Emitter to base voltage:9V; 4A NPN epitaxial planar transistor | HSMC | TO-220 | 3 | - | - | 41K |
| 205. | HMJE13007 | Emitter to base voltage:9V; 8A NPN epitaxial planar transistor | HSMC | TO-220 | 3 | - | - | 39K |
| 206. | HMJE2955T | Emitter to base voltage:5V; 10A PNP epitaxial planar transistor for general purpose of amplifier and switching applications | HSMC | TO-220 | 3 | - | - | 38K |
| 207. | HMJE3055T | Emitter to base voltage:5V; 10A PNP epitaxial planar transistor for general purpose of amplifier and switching applications | HSMC | TO-220 | 3 | - | - | 35K |
| 208. | MJE13003 | Switching Transistor | KEC | - | - | - | - | 394K |
| 209. | MJE13005 | NPN, silicon plastic power transistor. For 115 and 220V switch-mode applications such as switching regulators, inverters motor controls, solenoid/relay drivers and deflection circuits. Vceo(sus) = 400Vdc, Vcev = 700Vdc, Veb = 9Vdc, Ic = 4Adc, Pd = 75W. | USHA | TO-220 | 3 | -65°C | 150°C | 46K |
| 210. | MJE13007 | NPN, silicon plastic power transistor. Suited for 115 and 220V switch-mode applications such as switching regulators, inverters, motor controls, solenoid/relay. Vceo(sus) = 400Vdc, Vcev = 700Vdc, Veb = 9Vdc, Ic = 8Adc, Pd = 80W. | USHA | TO-220 | 3 | -65°C | 150°C | 29K |
| 211. | MJE170 | PNP Epitaxial Silicon Transistor | FAIR | - | - | - | - | 49K |
| 212. | MJE171 | PNP Epitaxial Silicon Transistor | FAIR | - | - | - | - | 49K |
| 213. | MJE172 | PNP Epitaxial Silicon Transistor | FAIR | - | - | - | - | 49K |
| 214. | MJE180 | NPN Epitaxial Silicon Transistor | FAIR | - | - | - | - | 48K |
| 215. | MJE181 | NPN Epitaxial Silicon Transistor | FAIR | - | - | - | - | 48K |
| 216. | MJE182 | NPN Epitaxial Silicon Transistor | FAIR | - | - | - | - | 48K |
| 217. | MJE200 | NPN Epitaxial Silicon Transistor | FAIR | - | - | - | - | 42K |
| 218. | MJE210 | PNP Epitaxial Silicon Transistor | FAIR | - | - | - | - | 41K |
| 219. | MJE2955T | PNP, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc Ic = 10Adc, PD = 75W. | USHA | TO-220 | 3 | -65°C | 150°C | 48K |
| 220. | MJE3055T | NPN, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo(sus) = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc, Ic = 10Adc, Pd = 75W. | USHA | TO-220 | 3 | -65°C | 150°C | 48K |
