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# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
41. | APT30M70BVFR | 300V, 48A power MOS V transistor | ADPOW | TO-247 | 3 | -55°C | 150°C | 66K |
42. | APT30M70BVR | 300V, 48A power MOS V transistor | ADPOW | TO-247 | 3 | -55°C | 150°C | 63K |
43. | APT40M70JVR | 400V, 53A power MOS V transistor | ADPOW | SOT-227 | 3 | -55°C | 150°C | 69K |
44. | APT40M70LVR | 400V, 57A power MOS V transistor | ADPOW | TO-264 | 3 | -55°C | 150°C | 62K |
45. | CMPDM7002A | N-channel enhancement-mode surface mount mosfet | CENTR | SOT-23 | 3 | -65°C | 150°C | 100K |
46. | CMXDM7002A | 60 V, dual N-channel enhancement-mode surface mount mosfet | CENTR | SOT | 6 | -65°C | 150°C | 87K |
47. | FU-68PDF-510M70B | 1.55m DFB-LD module with polarization maintaining fiber pigtail | MITS | - | 14 | -20°C | 70°C | 105K |
48. | FU-68PDF-520M70B | Wavelength:1553nm DFB-LD module with polarization maintaining fiber pigtail | MITS | - | 14 | -20°C | 70°C | 105K |
49. | FU-68PDF-V510M70B | Wavelength:1553nm DFB-LD module with polarization maintaining fiber pigtail | MITS | - | 14 | -20°C | 70°C | 96K |
50. | RM7000A | 64-bit MIPS RISC microprocessor | PMC | TBGA | 304 | -40°C | 85°C | 52K |
51. | RM7000A-350T | RM7000A microprocessor with On-chip secondary cache | PMC | TBGA | 304 | 0°C | 85°C | 1M |
52. | RM7000A-350TI | RM7000A microprocessor with On-chip secondary cache | PMC | TBGA | 304 | -40°C | 85°C | 1M |
53. | RM7000B | 64-bit MIPS RISC microprocessor with integrated L2 cache | PMC | TBGA | 304 | -40°C | 85°C | 36K |
54. | RM7000C | 64-bit MIPS RISC microprocessor with integrated L2 cache | PMC | TBGA | 304 | -40°C | 85°C | 37K |
55. | RM7065A | 64-bit MIPS RISC microprocessor with integrated L2 cache | PMC | TBGA | 256 | -40°C | 85°C | 52K |
56. | RM7065A-300T | RM7065A microprocessor with On-chip secondary cache | PMC | TBGA | 149 | 0°C | 85°C | 776K |
57. | RM7065A-350T | RM7065A microprocessor with On-chip secondary cache | PMC | TBGA | 149 | 0°C | 85°C | 776K |
58. | SM703 | 80 Watt, silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 36K |
59. | SM704 | 125 Watt, silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 37K |
60. | SM705 | 150 Watt, silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 36K |