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We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.

Found: 250      Displaying: 41 - 60
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
41.
APT30M70BVFR300V, 48A power MOS V transistor
ADPOW
TO-247
3
-55°C
150°C
66K
42.
APT30M70BVR300V, 48A power MOS V transistor
ADPOW
TO-247
3
-55°C
150°C
63K
43.
APT40M70JVR400V, 53A power MOS V transistor
ADPOW
SOT-227
3
-55°C
150°C
69K
44.
APT40M70LVR400V, 57A power MOS V transistor
ADPOW
TO-264
3
-55°C
150°C
62K
45.
CMPDM7002AN-channel enhancement-mode surface mount mosfet
CENTR
SOT-23
3
-65°C
150°C
100K
46.
CMXDM7002A60 V, dual N-channel enhancement-mode surface mount mosfet
CENTR
SOT
6
-65°C
150°C
87K
47.
FU-68PDF-510M70B1.55m DFB-LD module with polarization maintaining fiber pigtail
MITS
-
14
-20°C
70°C
105K
48.
FU-68PDF-520M70BWavelength:1553nm DFB-LD module with polarization maintaining fiber pigtail
MITS
-
14
-20°C
70°C
105K
49.
FU-68PDF-V510M70BWavelength:1553nm DFB-LD module with polarization maintaining fiber pigtail
MITS
-
14
-20°C
70°C
96K
50.
RM7000A64-bit MIPS RISC microprocessor
PMC
TBGA
304
-40°C
85°C
52K
51.
RM7000A-350TRM7000A microprocessor with On-chip secondary cache
PMC
TBGA
304
0°C
85°C
1M
52.
RM7000A-350TIRM7000A microprocessor with On-chip secondary cache
PMC
TBGA
304
-40°C
85°C
1M
53.
RM7000B64-bit MIPS RISC microprocessor with integrated L2 cache
PMC
TBGA
304
-40°C
85°C
36K
54.
RM7000C64-bit MIPS RISC microprocessor with integrated L2 cache
PMC
TBGA
304
-40°C
85°C
37K
55.
RM7065A64-bit MIPS RISC microprocessor with integrated L2 cache
PMC
TBGA
256
-40°C
85°C
52K
56.
RM7065A-300TRM7065A microprocessor with On-chip secondary cache
PMC
TBGA
149
0°C
85°C
776K
57.
RM7065A-350TRM7065A microprocessor with On-chip secondary cache
PMC
TBGA
149
0°C
85°C
776K
58.
SM70380 Watt, silicon gate enhancement mode RF power VDMOS transistor
POFET
-
4
-65°C
150°C
36K
59.
SM704125 Watt, silicon gate enhancement mode RF power VDMOS transistor
POFET
-
4
-65°C
150°C
37K
60.
SM705150 Watt, silicon gate enhancement mode RF power VDMOS transistor
POFET
-
4
-65°C
150°C
36K
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