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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 321. | BS62LV8000BC | 70/100ns 30-45mA 2.4-5.5V ultra low power/voltage CMOS SRAM 1M x 8bit | BSI | BGA | 48 | 0°C | 70°C | 220K |
| 322. | BS62LV8000BI | 70/100ns 30-45mA 2.4-5.5V ultra low power/voltage CMOS SRAM 1M x 8bit | BSI | BGA | 48 | -40°C | 70°C | 220K |
| 323. | BS62LV8000EC | 70/100ns 30-45mA 2.4-5.5V ultra low power/voltage CMOS SRAM 1M x 8bit | BSI | TSOP | 44 | 0°C | 70°C | 220K |
| 324. | BS62LV8000EI | 70/100ns 30-45mA 2.4-5.5V ultra low power/voltage CMOS SRAM 1M x 8bit | BSI | TSOP | 44 | -40°C | 70°C | 220K |
| 325. | BS62LV8003BC | 70/100ns 20mA 2.4-3.6V very low power/voltage CMOS SRAM 1M x 8bit | BSI | BGA | 48 | 0°C | 70°C | 217K |
| 326. | BS62LV8003BI | 70/100ns 20mA 2.4-3.6V very low power/voltage CMOS SRAM 1M x 8bit | BSI | BGA | 48 | -40°C | 85°C | 217K |
| 327. | BS62LV8003EC | 70/100ns 20mA 2.4-3.6V very low power/voltage CMOS SRAM 1M x 8bit | BSI | TSOP | 44 | 0°C | 70°C | 217K |
| 328. | BS62LV8003EI | 70/100ns 20mA 2.4-3.6V very low power/voltage CMOS SRAM 1M x 8bit | BSI | TSOP | 44 | -40°C | 85°C | 217K |
| 329. | BS62LV8005BI | 55/70ns 45mA 4.5-5.5V very low power/voltage CMOS SRAM 1M x 8bit | BSI | BGA | 48 | -40°C | 85°C | 328K |
| 330. | BS62LV8005EC | 55/70ns 45mA 4.5-5.5V very low power/voltage CMOS SRAM 1M x 8bit | BSI | TSOP | 44 | 0°C | 70°C | 328K |
| 331. | BS62LV8005EI | 55/70ns 45mA 4.5-5.5V very low power/voltage CMOS SRAM 1M x 8bit | BSI | TSOP | 44 | -40°C | 85°C | 328K |
| 332. | EN29LV800JB-70T | 8 Megabit (1024K x 8-bit/512K x 16-bit) flach memory. Boot sector flash memory, CMOS 3.0 volt only. Speed 70ns. Bottom sector. | EON | TSOP | 48 | 0°C | 70°C | 235K |
| 333. | EN29LV800JB-70TI | 8 Megabit (1024K x 8-bit/512K x 16-bit) flach memory. Boot sector flash memory, CMOS 3.0 volt only. Speed 70ns. Bottom sector. | EON | TSOP | 48 | -40°C | 85°C | 235K |
| 334. | EN29LV800JB-90T | 8 Megabit (1024K x 8-bit/512K x 16-bit) flach memory. Boot sector flash memory, CMOS 3.0 volt only. Speed 90ns. Bottom sector. | EON | TSOP | 48 | 0°C | 70°C | 235K |
| 335. | EN29LV800JB-90TI | 8 Megabit (1024K x 8-bit/512K x 16-bit) flach memory. Boot sector flash memory, CMOS 3.0 volt only. Speed 90ns. Bottom sector. | EON | TSOP | 48 | -40°C | 85°C | 235K |
| 336. | EN29LV800JT-70T | 8 Megabit (1024K x 8-bit/512K x 16-bit) flach memory. Boot sector flash memory, CMOS 3.0 volt only. Speed 70ns. Top sector. | EON | TSOP | 48 | 0°C | 70°C | 235K |
| 337. | EN29LV800JT-70TI | 8 Megabit (1024K x 8-bit/512K x 16-bit) flach memory. Boot sector flash memory, CMOS 3.0 volt only. Speed 70ns. Top sector. | EON | TSOP | 48 | -40°C | 85°C | 235K |
| 338. | EN29LV800JT-90T | 8 Megabit (1024K x 8-bit/512K x 16-bit) flach memory. Boot sector flash memory, CMOS 3.0 volt only. Speed 90ns. Top sector. | EON | TSOP | 48 | 0°C | 70°C | 235K |
| 339. | EN29LV800JT-90TI | 8 Megabit (1024K x 8-bit/512K x 16-bit) flach memory. Boot sector flash memory, CMOS 3.0 volt only. Speed 90ns. Top sector. | EON | TSOP | 48 | -40°C | 85°C | 235K |
| 340. | MX29LV800TXEI-90 | Access time: 90ns; 8M-bit (1M x 8/512K x 16) CMOS single voltage 3V only flash memory | MCNIX | CSP | 48 | -40°C | 85°C | 1M |
