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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 781. | BS616LV4010AC | 70/100ns 20mA 2.7-3.6V ultra low power/voltage CMOS SRAM 256K x 16bit | BSI | BGA | 48 | 0°C | 70°C | 227K |
| 782. | BS616LV4010AI | 70/100ns 20mA 2.7-3.6V ultra low power/voltage CMOS SRAM 256K x 16bit | BSI | BGA | 48 | -40°C | 85°C | 227K |
| 783. | BS616LV4010BC | 70/100ns 20mA 2.7-3.6V ultra low power/voltage CMOS SRAM 256K x 16bit | BSI | BGA | 48 | 0°C | 70°C | 227K |
| 784. | BS616LV4010BI | 70/100ns 20mA 2.7-3.6V ultra low power/voltage CMOS SRAM 256K x 16bit | BSI | BGA | 48 | -40°C | 85°C | 227K |
| 785. | BS616LV4010DC | 70/100ns 20mA 2.7-3.6V ultra low power/voltage CMOS SRAM 256K x 16bit | BSI | DICE | 48 | 0°C | 70°C | 227K |
| 786. | BS616LV4010DI | 70/100ns 20mA 2.7-3.6V ultra low power/voltage CMOS SRAM 256K x 16bit | BSI | DICE | 48 | -40°C | 85°C | 227K |
| 787. | BS616LV4010EC | 70/100ns 20mA 2.7-3.6V ultra low power/voltage CMOS SRAM 256K x 16bit | BSI | TSOP | 44 | 0°C | 70°C | 227K |
| 788. | BS616LV4010EI | 70/100ns 20mA 2.7-3.6V ultra low power/voltage CMOS SRAM 256K x 16bit | BSI | TSOP | 44 | -40°C | 85°C | 227K |
| 789. | BS616LV4011AC | 70/100ns 20-45mA 2.4-5.5V ultra low power/voltage CMOS SRAM 256K x 16bit | BSI | BGA | 48 | 0°C | 70°C | 231K |
| 790. | BS616LV4011AI | 70/100ns 20-45mA 2.4-5.5V ultra low power/voltage CMOS SRAM 256K x 16bit | BSI | BGA | 48 | -40°C | 85°C | 231K |
| 791. | BS616LV4011BC | 70/100ns 20-45mA 2.4-5.5V ultra low power/voltage CMOS SRAM 256K x 16bit | BSI | BGA | 48 | 0°C | 70°C | 231K |
| 792. | BS616LV4011BI | 70/100ns 20-45mA 2.4-5.5V ultra low power/voltage CMOS SRAM 256K x 16bit | BSI | BGA | 48 | -40°C | 85°C | 231K |
| 793. | BS616LV4011DC | 70/100ns 20-45mA 2.4-5.5V ultra low power/voltage CMOS SRAM 256K x 16bit | BSI | DICE | 48 | 0°C | 70°C | 231K |
| 794. | BS616LV4011DI | 70/100ns 20-45mA 2.4-5.5V ultra low power/voltage CMOS SRAM 256K x 16bit | BSI | DICE | 48 | -40°C | 85°C | 231K |
| 795. | BS616LV4011EC | 70/100ns 20-45mA 2.4-5.5V ultra low power/voltage CMOS SRAM 256K x 16bit | BSI | TSOP | 44 | 0°C | 70°C | 231K |
| 796. | BS616LV4011EI | 70/100ns 20-45mA 2.4-5.5V ultra low power/voltage CMOS SRAM 256K x 16bit | BSI | TSOP | 44 | -40°C | 85°C | 231K |
| 797. | MX29LV401BXBI-70 | Access time: 70ns; 4M-bit (512K x 8/256K x 16) CMOS single voltage 3V only flash memory | MCNIX | TSOP | 48 | -40°C | 85°C | 986K |
| 798. | MX29LV401BXBI-90 | Access time: 90ns; 4M-bit (512K x 8/256K x 16) CMOS single voltage 3V only flash memory | MCNIX | TSOP | 48 | -40°C | 85°C | 986K |
| 799. | MX29LV401TXBI-70 | Access time: 70ns; 4M-bit (512K x 8/256K x 16) CMOS single voltage 3V only flash memory | MCNIX | TSOP | 48 | -40°C | 85°C | 986K |
| 800. | MX29LV401TXBI-90 | Access time: 90ns; 4M-bit (512K x 8/256K x 16) CMOS single voltage 3V only flash memory | MCNIX | TSOP | 48 | -40°C | 85°C | 986K |
