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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 281. | 28LV256JC-3 | Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | PLCC | 32 | 0°C | 70°C | 41K |
| 282. | 28LV256JC-4 | Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | PLCC | 32 | 0°C | 70°C | 41K |
| 283. | 28LV256JC-5 | Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | PLCC | 32 | 0°C | 70°C | 41K |
| 284. | 28LV256JC-6 | Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | PLCC | 32 | 0°C | 70°C | 41K |
| 285. | 28LV256JI-3 | Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | PLCC | 32 | -40°C | 85°C | 41K |
| 286. | 28LV256JI-4 | Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | PLCC | 32 | -40°C | 85°C | 41K |
| 287. | 28LV256JI-5 | Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | PLCC | 32 | -40°C | 85°C | 41K |
| 288. | 28LV256JI-6 | Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | PLCC | 32 | -40°C | 85°C | 41K |
| 289. | 28LV256JM-3 | Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | PLCC | 32 | -55°C | 125°C | 41K |
| 290. | 28LV256JM-4 | Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | PLCC | 32 | -55°C | 125°C | 41K |
| 291. | 28LV256JM-4 | Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | PLCC | 32 | -55°C | 125°C | 41K |
| 292. | 28LV256JM-5 | Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | PLCC | 32 | -55°C | 125°C | 41K |
| 293. | 28LV256JM-6 | Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | PLCC | 32 | -55°C | 125°C | 41K |
| 294. | 28LV256TM-6 | Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | TSOP | 28 | -55°C | 125°C | 41K |
| 295. | BS62LV256PC | 70/100ns 20-35mA 2.4-5.5V very low power/voltage CMOS SRAM 32K x 8bit | BSI | DIP | 28 | 0°C | 70°C | 331K |
| 296. | BS62LV256PI | 70/100ns 20-35mA 2.4-5.5V very low power/voltage CMOS SRAM 32K x 8bit | BSI | DIP | 28 | -40°C | 85°C | 331K |
| 297. | BS62LV256SC | 70/100ns 20-35mA 2.4-5.5V very low power/voltage CMOS SRAM 32K x 8bit | BSI | SOP | 28 | 0°C | 70°C | 331K |
| 298. | BS62LV256SI | 70/100ns 20-35mA 2.4-5.5V very low power/voltage CMOS SRAM 32K x 8bit | BSI | SOP | 28 | -40°C | 85°C | 331K |
| 299. | BS62LV256TC | 70/100ns 20-35mA 2.4-5.5V very low power/voltage CMOS SRAM 32K x 8bit | BSI | TSOP | 28 | 0°C | 70°C | 331K |
| 300. | BS62LV256TI | 70/100ns 20-35mA 2.4-5.5V very low power/voltage CMOS SRAM 32K x 8bit | BSI | TSOP | 28 | -40°C | 85°C | 331K |
