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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1661. | 28LV256SM-5 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. | TURBO | SOIC | 28 | -55°C | 125°C | 41K |
| 1662. | 28LV256SM-6 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. | TURBO | SOIC | 28 | -55°C | 125°C | 41K |
| 1663. | 28LV256TC-3 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | TURBO | TSOP | 28 | 0°C | 70°C | 41K |
| 1664. | 28LV256TC-4 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | TURBO | TSOP | 28 | 0°C | 70°C | 41K |
| 1665. | 28LV256TC-5 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. | TURBO | TSOP | 28 | 0°C | 70°C | 41K |
| 1666. | 28LV256TC-6 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. | TURBO | TSOP | 28 | 0°C | 70°C | 41K |
| 1667. | 28LV256TI-3 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | TURBO | TSOP | 28 | -40°C | 85°C | 41K |
| 1668. | 28LV256TI-4 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | TURBO | TSOP | 28 | -40°C | 85°C | 41K |
| 1669. | 28LV256TI-5 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. | TURBO | TSOP | 28 | -40°C | 85°C | 41K |
| 1670. | 28LV256TI-6 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. | TURBO | TSOP | 28 | -40°C | 85°C | 41K |
| 1671. | 28LV256TM-3 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | TURBO | TSOP | 28 | -55°C | 125°C | 41K |
| 1672. | 28LV256TM-4 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | TURBO | TSOP | 28 | -55°C | 125°C | 41K |
| 1673. | 28LV256TM-5 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. | TURBO | TSOP | 28 | -55°C | 125°C | 41K |
| 1674. | 28LV256TM-6 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. | TURBO | TSOP | 28 | -55°C | 125°C | 41K |
| 1675. | IS62LV256-45J | 45ns; 3.3V; 32K x 8 low voltage static RAM | ICSI | TSOP | 28 | 0°C | 70°C | 421K |
| 1676. | IS62LV256-45JI | 45ns; 3.3V; 32K x 8 low voltage static RAM | ICSI | TSOP | 28 | -40°C | 85°C | 421K |
| 1677. | IS62LV256-45N | 45ns; 3.3V; 32K x 8 low voltage static RAM | ICSI | DIP | 28 | 0°C | 70°C | 421K |
| 1678. | IS62LV256-45U | 45ns; 3.3V; 32K x 8 low voltage static RAM | ICSI | SOP | 28 | 0°C | 70°C | 421K |
| 1679. | IS62LV256-45UI | 45ns; 3.3V; 32K x 8 low voltage static RAM | ICSI | SOP | 28 | -40°C | 85°C | 421K |
| 1680. | IS62LV256-70U | 70ns; 3.3V; 32K x 8 low voltage static RAM | ICSI | SOP | 28 | 0°C | 70°C | 421K |
