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We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.

Found: 54      Displaying: 41 - 54
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
41.
FLQ2-1/2Midget, time-delay fuse. Supplementary overcurrent protection. Ampere rating: 2-1/2 A. Voltage rating: 500 VAC. Interrupting rating: 10,000 A rms symmetrical.
LIFUS
-
2
-
-
237K
42.
FLQ2-1/4Midget, time-delay fuse. Supplementary overcurrent protection. Ampere rating: 2-1/4 A. Voltage rating: 500 VAC. Interrupting rating: 10,000 A rms symmetrical.
LIFUS
-
2
-
-
237K
43.
FLQ2/10Midget, time-delay fuse. Supplementary overcurrent protection. Ampere rating: 2/10 A. Voltage rating: 500 VAC. Interrupting rating: 10,000 A rms symmetrical.
LIFUS
-
2
-
-
237K
44.
FLQ20Midget, time-delay fuse. Supplementary overcurrent protection. Ampere rating: 20 A. Voltage rating: 500 VAC. Interrupting rating: 10,000 A rms symmetrical.
LIFUS
-
2
-
-
237K
45.
FLQ25Midget, time-delay fuse. Supplementary overcurrent protection. Ampere rating: 25 A. Voltage rating: 500 VAC. Interrupting rating: 10,000 A rms symmetrical.
LIFUS
-
2
-
-
237K
46.
ISPLSI5384VA-70LQ20870 MHz in-system prommable 3.3V superWIDE high density PLD
LATIC
PQFP
208
-55°C
125°C
350K
47.
ISPLSI5512VA-100LQ208100 MHz in-system prommable 3.3V superWIDE high density PLD
LATIC
PQFP
208
-55°C
125°C
331K
48.
ISPLSI5512VA-100LQ208100 MHz in-system prommable 3.3V superWIDE high density PLD
LATIC
PQFP
208
-55°C
125°C
331K
49.
ISPLSI5512VA-110LQ208110 MHz in-system prommable 3.3V superWIDE high density PLD
LATIC
PQFP
208
-55°C
125°C
331K
50.
ISPLSI5512VA-70LQ20870 MHz in-system prommable 3.3V superWIDE high density PLD
LATIC
PQFP
208
-55°C
125°C
331K
51.
ULQ2003ADHigh-voltage high-current darlington transistor arrays
TI
SO
8
-40°C
85°C
168K
52.
ULQ2003ANHigh-voltage high-current darlington transistor arrays
TI
DIP
8
-40°C
85°C
168K
53.
ULQ2004ADHigh-voltage high-current darlington transistor arrays
TI
SO
8
-40°C
70°C
168K
54.
ULQ2004ANHigh-voltage high-current darlington transistor arrays
TI
DIP
8
-40°C
70°C
168K
1 2 3


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