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We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
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We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
Found: 48 Displaying: 41 - 48| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | | 41. | IRLD024 | N-channel MOSFET for fast switching applications, 60V, 2.5A | IRF | HD-1 | 3 | -55°C | 175°C | 170K | | 42. | RLD03N06CLE | Power dissipation 30 W Transistor polarity N Channel Current Id cont. 0.3 A Voltage Vgs th max. 2.5 V (I-Pak) Voltage Vds max 30 V Resistance Rds on 6 R Voltage ESD breakdown 2 kV Current limit (max) 420 mA | FAIR | TO-251 | - | - | - | 188K | | 43. | SST58LD024-70-C-P1H | ATA-disc chip | SSTI | PSDIP | 32 | 0°C | 70°C | 363K | | 44. | SST58LD048-70-C-P1H | ATA-disc chip | SSTI | PSDIP | 32 | 0°C | 70°C | 363K | | 45. | SST58LD064-70-C-P1H | ATA-disc chip | SSTI | PSDIP | 32 | 0°C | 70°C | 363K | | 46. | SST58LD096-70-C-P1H | ATA-disc chip | SSTI | PSDIP | 32 | 0°C | 70°C | 363K | | 47. | W4NXE4C-LD00 | Diameter: 76.2mm; low micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | CREE | - | - | - | - | 279K | | 48. | W4NXE8C-LD00 | Diameter: 76.2mm; low micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | CREE | - | - | - | - | 279K |
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