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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 401. | CDLL255 | 8.2 mA, Current regulator diode | CDIDI | DO-213AB | 2 | -65°C | 175°C | 15K |
| 402. | CDLL256 | 9.1 mA, Current regulator diode | CDIDI | DO-213AB | 2 | -65°C | 175°C | 15K |
| 403. | CDLL257 | 10 mA, Current regulator diode | CDIDI | DO-213AB | 2 | -65°C | 175°C | 15K |
| 404. | RL251 | Silicon rectifier. Max recurrent peak reverse voltage 50V, max RMS voltage 35V, max DC blocking voltage 50V. Max average forward rectified current 2.5A at Ta=75degC. | RECTR | R-3 | 2 | -65°C | 175°C | 23K |
| 405. | RL252 | Silicon rectifier. Max recurrent peak reverse voltage 100V, max RMS voltage 70V, max DC blocking voltage 100V. Max average forward rectified current 2.5A at Ta=75degC. | RECTR | R-3 | 2 | -65°C | 175°C | 23K |
| 406. | RL253 | Silicon rectifier. Max recurrent peak reverse voltage 200V, max RMS voltage 140V, max DC blocking voltage 200V. Max average forward rectified current 2.5A at Ta=75degC. | RECTR | R-3 | 2 | -65°C | 175°C | 23K |
| 407. | RL254 | Silicon rectifier. Max recurrent peak reverse voltage 400V, max RMS voltage 280V, max DC blocking voltage 400V. Max average forward rectified current 2.5A at Ta=75degC. | RECTR | R-3 | 2 | -65°C | 175°C | 23K |
| 408. | RL255 | Silicon rectifier. Max recurrent peak reverse voltage 600V, max RMS voltage 420V, max DC blocking voltage 600V. Max average forward rectified current 2.5A at Ta=75degC. | RECTR | R-3 | 2 | -65°C | 175°C | 23K |
| 409. | RL256 | Silicon rectifier. Max recurrent peak reverse voltage 800V, max RMS voltage 560V, max DC blocking voltage 800V. Max average forward rectified current 2.5A at Ta=75degC. | RECTR | R-3 | 2 | -65°C | 175°C | 23K |
| 410. | RL257 | Silicon rectifier. Max recurrent peak reverse voltage 1000V, max RMS voltage 700V, max DC blocking voltage 1000V. Max average forward rectified current 2.5A at Ta=75degC. | RECTR | R-3 | 2 | -65°C | 175°C | 23K |
| 411. | UT61L256CJC-10 | Access time: 10 ns, 32 K x 8 Bit high speed CMOS SRAM | UTRON | SOJ | 28 | 0°C | 70°C | 175K |
| 412. | UT61L256CJC-12 | Access time: 12 ns, 32 K x 8 Bit high speed CMOS SRAM | UTRON | SOJ | 28 | 0°C | 70°C | 175K |
| 413. | UT61L256CJC-15 | Access time: 15 ns, 32 K x 8 Bit high speed CMOS SRAM | UTRON | SOJ | 28 | 0°C | 70°C | 175K |
| 414. | UT61L256CLS-10 | Access time: 10 ns, 32 K x 8 Bit high speed CMOS SRAM | UTRON | STSOP | 28 | 0°C | 70°C | 175K |
| 415. | UT61L256CLS-12 | Access time: 12 ns, 32 K x 8 Bit high speed CMOS SRAM | UTRON | STSOP | 28 | 0°C | 70°C | 175K |
| 416. | UT61L256CLS-15 | Access time: 15 ns, 32 K x 8 Bit high speed CMOS SRAM | UTRON | STSOP | 28 | 0°C | 70°C | 175K |
| 417. | UT62L25616MC-55LE | Access time: 55 ns, 256 K x 16 Bit low power CMOS SRAM | UTRON | TSOP | 44 | -20°C | 85°C | 194K |
| 418. | UT62L25616MC-55LLE | Access time: 55 ns, 256 K x 16 Bit low power CMOS SRAM | UTRON | TSOP | 44 | -20°C | 85°C | 194K |
| 419. | UT62L25616MC-70LE | Access time: 70 ns, 256 K x 16 Bit low power CMOS SRAM | UTRON | TSOP | 44 | -20°C | 85°C | 194K |
| 420. | UT62L25616MC-70LLE | Access time: 70 ns, 256 K x 16 Bit low power CMOS SRAM | UTRON | TSOP | 44 | -20°C | 85°C | 194K |
