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Found: 407      Displaying: 261 - 280
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
261.
EL2250CN125MHz single supply dual/quad op Amp
ELANT
PDIP
8
-40°C
85°C
595K
262.
EL2250CN125MHz single supply dual/quad op Amp
ELANT
PDIP
8
-40°C
85°C
595K
263.
EL2250CS125MHz single supply dual/quad op Amp
ELANT
SO
8
-40°C
85°C
595K
264.
EL2257CN125MHz single supply clamping op Amp
ELANT
PDIP
14
-40°C
85°C
1M
265.
EL2257CS125MHz single supply clamping op Amp
ELANT
SOIC
14
-40°C
85°C
1M
266.
EL2260CNDual/quad 130MHz current feedback amplifier
ELANT
PDIP
8
-40°C
85°C
461K
267.
EL2260CSDual/quad 130MHz current feedback amplifier
ELANT
SOIC
8
-40°C
85°C
461K
268.
GAL22V10B-10LJHigh Performance E2CMOS PLD, 10ns, low power
LATIC
PLCC
28
0°C
75°C
386K
269.
GAL22V10B-15QJHigh Performance E2CMOS PLD, 15ns, quarter power
LATIC
PLCC
28
0°C
75°C
386K
270.
GAL22V10C-5LJHigh Performance E2CMOS PLD, 5ns, low power
LATIC
PLCC
28
0°C
75°C
386K
271.
GAL22V10C-7LPHigh Performance E2CMOS PLD, 7ns, low power
LATIC
DIP
24
0°C
75°C
386K
272.
GAL22V10D-15QJHigh Performance E2CMOS PLD, 15ns, quarter power
LATIC
PLCC
28
0°C
75°C
386K
273.
GAL22V10D-15QPHigh Performance E2CMOS PLD, 15ns, quarter power
LATIC
DIP
24
0°C
75°C
386K
274.
GAL22V10D-4LJHigh performance E2CMOS PLD, 4ns, low power
LATIC
PLCC
28
0°C
75°C
386K
275.
GAL22V10D-5LJHigh Performance E2CMOS PLD, 5ns, low power
LATIC
PLCC
28
0°C
75°C
386K
276.
GAL22V10D-7LPHigh Performance E2CMOS PLD, 7ns, low power
LATIC
DIP
24
0°C
75°C
386K
277.
L2256 Watt, silicon gate enhancement mode RF power LDMOS transistor
POFET
SO-8
8
-65°C
150°C
38K
278.
SL22-T1Reverse voltage: 20.00V; 2.0A low VF surface mount schottky barrier rectifier
WTE
SMB
2
-65°C
125°C
40K
279.
SL22-T1Reverse voltage: 20.00V; 2.0A low VF surface mount schottky barrier rectifier
WTE
SMB
2
-65°C
125°C
40K
280.
SL22-T3Reverse voltage: 20.00V; 2.0A low VF surface mount schottky barrier rectifier
WTE
SMB
2
-65°C
125°C
40K
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