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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 661. | RL1601CS | Glass passivated silicon rectifier. Max recurrent peak reverse voltage 50V, max RMS voltage 35V, max DC blocking voltage 50V. Max average forward rectified current 16.0A at Tc=100degC. | RECTR | D2PAK | 3 | -65°C | 150°C | 23K |
| 662. | RL1602CS | Glass passivated silicon rectifier. Max recurrent peak reverse voltage 100V, max RMS voltage 70V, max DC blocking voltage 100V. Max average forward rectified current 16.0A at Tc=100degC. | RECTR | D2PAK | 3 | -65°C | 150°C | 23K |
| 663. | RL1603CS | Glass passivated silicon rectifier. Max recurrent peak reverse voltage 200V, max RMS voltage 140V, max DC blocking voltage 200V. Max average forward rectified current 16.0A at Tc=100degC. | RECTR | D2PAK | 3 | -65°C | 150°C | 23K |
| 664. | RL1604CS | Glass passivated silicon rectifier. Max recurrent peak reverse voltage 400V, max RMS voltage 280V, max DC blocking voltage 400V. Max average forward rectified current 16.0A at Tc=100degC. | RECTR | D2PAK | 3 | -65°C | 150°C | 23K |
| 665. | RL1605C | Glass passivated silicon rectifier. Max recurrent peak reverse voltage 600V, max RMS bridge input voltage 420V, max DC blocking voltage 600V. Max average forward rectified current 16.0A at Tc=100degC. | RECTR | TO-220 | 4 | -65°C | 150°C | 26K |
| 666. | RL1605CS | Glass passivated silicon rectifier. Max recurrent peak reverse voltage 600V, max RMS voltage 420V, max DC blocking voltage 600V. Max average forward rectified current 16.0A at Tc=100degC. | RECTR | D2PAK | 3 | -65°C | 150°C | 23K |
| 667. | RL1606C | Glass passivated silicon rectifier. Max recurrent peak reverse voltage 800V, max RMS bridge input voltage 560V, max DC blocking voltage 800V. Max average forward rectified current 16.0A at Tc=100degC. | RECTR | TO-220 | 4 | -65°C | 150°C | 26K |
| 668. | RL1606CS | Glass passivated silicon rectifier. Max recurrent peak reverse voltage 800V, max RMS voltage 560V, max DC blocking voltage 800V. Max average forward rectified current 16.0A at Tc=100degC. | RECTR | D2PAK | 3 | -65°C | 150°C | 23K |
| 669. | RL1607C | Glass passivated silicon rectifier. Max recurrent peak reverse voltage 1000V, max RMS bridge input voltage 700V, max DC blocking voltage 1000V. Max average forward rectified current 16.0A at Tc=100degC. | RECTR | TO-220 | 4 | -65°C | 150°C | 26K |
| 670. | UT51L164JC-35 | Access time: 35 ns, 256 K x 16 Bit EDO DRAM | UTRON | SOJ | 40 | 0°C | 70°C | 404K |
| 671. | UT51L164JC-40 | Access time: 40 ns, 256 K x 16 Bit EDO DRAM | UTRON | SOJ | 40 | 0°C | 70°C | 404K |
| 672. | UT51L164JC-50 | Access time: 50 ns, 256 K x 16 Bit EDO DRAM | UTRON | SOJ | 40 | 0°C | 70°C | 404K |
| 673. | UT51L164JC-60 | Access time: 60 ns, 256 K x 16 Bit EDO DRAM | UTRON | SOJ | 40 | 0°C | 70°C | 404K |
| 674. | UT51L164MC-35 | Access time: 35 ns, 256 K x 16 Bit EDO DRAM | UTRON | TSOP | 40 | 0°C | 70°C | 404K |
| 675. | UT51L164MC-40 | Access time: 40 ns, 256 K x 16 Bit EDO DRAM | UTRON | TSOP | 40 | 0°C | 70°C | 404K |
| 676. | UT51L164MC-50 | Access time: 50 ns, 256 K x 16 Bit EDO DRAM | UTRON | TSOP | 40 | 0°C | 70°C | 404K |
| 677. | UT51L164MC-60 | Access time: 60 ns, 256 K x 16 Bit EDO DRAM | UTRON | TSOP | 40 | 0°C | 70°C | 404K |
| 678. | UT52L1616MC-10 | Access time: 7 ns, 1 M x 16 Bit SDRAM | UTRON | TSOP | 50 | 0°C | 70°C | 385K |
| 679. | UT52L1616MC-7 | Access time: 5.5 ns, 1 M x 16 Bit SDRAM | UTRON | TSOP | 50 | 0°C | 70°C | 385K |
| 680. | UT52L1616MC-8 | Access time: 6 ns, 1 M x 16 Bit SDRAM | UTRON | TSOP | 50 | 0°C | 70°C | 385K |
