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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 161. | IRFL1006 | HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.22 Ohm, ID = 1.6A | IRF | SOT-223 | 3 | -55°C | 150°C | 127K |
| 162. | L1002GD | 1.1 x 3.4 mm rectangular solid lamp. Green. Lens type green diffused. | KNBRT | - | 2 | -40°C | 85°C | 138K |
| 163. | L1002HD | 1.1 x 3.4 mm rectangular solid lamp. Bright red. Lens type red diffused. | KNBRT | - | 2 | -40°C | 85°C | 138K |
| 164. | L1002ID | 1.1 x 3.4 mm rectangular solid lamp. High efficiency red. Lens type red diffused. | KNBRT | - | 2 | -40°C | 85°C | 138K |
| 165. | L1002YD | 1.1 x 3.4 mm rectangular solid lamp. Yellow. Lens type yellow diffused. | KNBRT | - | 2 | -40°C | 85°C | 138K |
| 166. | LP61L1008AS-10 | 10ns; operating current:155mA; standby current:5mA; 128 x 8bit 3.3V high speed center power CMOS SRAM | AMIC | SOJ | 32 | 0°C | 70°C | 118K |
| 167. | LP61L1008AS-10 | 10ns 155mA 128K x 8bit 3.3V high speed center power CMOS SRAM | AMICC | SOJ | 32 | 0°C | 70°C | 118K |
| 168. | LP61L1008AS-12 | 12ns; operating current:150mA; standby current:5mA; 128 x 8bit 3.3V high speed center power CMOS SRAM | AMIC | SOJ | 32 | 0°C | 70°C | 118K |
| 169. | LP61L1008AS-8 | 8ns; operating current:160mA; standby current:5mA; 128 x 8bit 3.3V high speed center power CMOS SRAM | AMIC | SOJ | 32 | 0°C | 70°C | 118K |
| 170. | LP61L1008AS-8 | 8ns 160mA 128K x 8bit 3.3V high speed center power CMOS SRAM | AMICC | SOJ | 32 | 0°C | 70°C | 118K |
| 171. | LP61L1008S-12 | 12ns 180mA 128K x 8bit 3.3V high speed center power CMOS SRAM | AMICC | SOJ | 32 | 0°C | 70°C | 142K |
| 172. | LP61L1008S-15 | 15ns 170mA 128K x 8bit 3.3V high speed center power CMOS SRAM | AMICC | SOJ | 32 | 0°C | 70°C | 142K |
| 173. | LP61L1008X-12 | 12ns 180mA 128K x 8bit 3.3V high speed center power CMOS SRAM | AMICC | SOJ | 32 | 0°C | 70°C | 142K |
| 174. | LP61L1008X-15 | 15ns 170mA 128K x 8bit 3.3V high speed center power CMOS SRAM | AMICC | TSOP | 32 | 0°C | 70°C | 142K |
| 175. | MX27L1000TI-20 | Access time: 200ns; 1M-bit (128K x 8) low voltage operation CMOS EPROM | MCNIX | TSOP | 32 | -40°C | 85°C | 931K |
| 176. | MX27L1000TI-25 | Access time: 250ns; 1M-bit (128K x 8) low voltage operation CMOS EPROM | MCNIX | TSOP | 32 | -40°C | 85°C | 931K |
| 177. | UMIL100 | 100 W, 28 V, 225-400 MHz common emitter transistor | GHZ | 55HV | 3 | - | - | 166K |
| 178. | UMIL100A | 100 W, 28 V, 225-400 MHz common emitter transistor | GHZ | 55JU | 3 | - | - | 133K |
| 179. | V62C1164096L100B | 256K x 16 CMOS static RAM | MOSEL | BGA | 48 | 0°C | 70°C | 178K |
| 180. | VMIL100 | 100 W, 28 V, 100-200 MHz common emitter transistor | GHZ | 55HV | 3 | - | - | 134K |
