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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 61. | 28C256AJM-1 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. | TURBO | PLCC | 32 | -55°C | 125°C | 41K |
| 62. | 28C256AJM-2 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. | TURBO | PLCC | 32 | -55°C | 125°C | 41K |
| 63. | 28C256AJM-3 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | TURBO | PLCC | 32 | -55°C | 125°C | 41K |
| 64. | 28C256AJM-4 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | TURBO | PLCC | 32 | -55°C | 125°C | 41K |
| 65. | 28C64AJM-2 | High speed 150 ns CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | TRBIC | PLCC | 32 | -55°C | 125°C | 42K |
| 66. | 28C64AJM-4 | High speed 250 ns CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | TRBIC | PLCC | 32 | -55°C | 125°C | 42K |
| 67. | 28LV256JM-3 | Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | PLCC | 32 | -55°C | 125°C | 41K |
| 68. | 28LV256JM-4 | Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | PLCC | 32 | -55°C | 125°C | 41K |
| 69. | 28LV256JM-4 | Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | PLCC | 32 | -55°C | 125°C | 41K |
| 70. | 28LV256JM-5 | Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | PLCC | 32 | -55°C | 125°C | 41K |
| 71. | 28LV256JM-6 | Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | PLCC | 32 | -55°C | 125°C | 41K |
| 72. | 28LV64JM-3 | Speed: 200 ns, Low voltage CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | TRBIC | PLCC | 32 | -55°C | 125°C | 42K |
| 73. | 28LV64JM-4 | Speed: 250 ns, Low voltage CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | TRBIC | PLCC | 32 | -55°C | 125°C | 42K |
| 74. | 28LV64JM-5 | Speed: 300 ns, Low voltage CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | TRBIC | PLCC | 32 | -55°C | 125°C | 42K |
| 75. | 28LV64JM-6 | Speed: 400 ns, Low voltage CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | TRBIC | PLCC | 32 | -55°C | 125°C | 42K |
| 76. | 29C010JM-1 | High speed 120 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM | TRBIC | PLCC | 32 | -55°C | 125°C | 52K |
| 77. | 29C010JM-2 | High speed 150 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM | TRBIC | PLCC | 32 | -55°C | 125°C | 52K |
| 78. | 29C021JM-1 | High speed 150 ns CMOS 2 Megabit programmable and erasable ROM 256K x 8 BIT flash PEROM | TRBIC | PLCC | 32 | -55°C | 125°C | 54K |
| 79. | 29C021JM-2 | High speed 200 ns CMOS 2 Megabit programmable and erasable ROM 256K x 8 BIT flash PEROM | TRBIC | PLCC | 32 | -55°C | 125°C | 54K |
| 80. | 29C021JM-3 | High speed 250 ns CMOS 2 Megabit programmable and erasable ROM 256K x 8 BIT flash PEROM | TRBIC | PLCC | 32 | -55°C | 125°C | 54K |
