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We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
ChipManuals is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
Found: 50 Displaying: 21 - 40| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | | 21. | MJD112 | Darlington Transistor | KEC | - | - | - | - | 394K | | 22. | MJD112L | Darlington Transistor | KEC | - | - | - | - | 394K | | 23. | MJD122 | NPN transistor, for general purpose amplifier and low speed switching applications, 100V, 8A | FAIR | TO-252 | 3 | -65°C | 150°C | 137K | | 24. | MJD122-1 | NPN transistor, for general purpose amplifier and low speed switching applications, 100V, 8A | FAIR | TO-251 | 3 | -65°C | 150°C | 137K | | 25. | MJD122-1 | NPN darlington transistor for high DC current gain, 100V, 5A | STM | TO-252 | 3 | -65°C | 150°C | 91K | | 26. | MJD122T4 | NPN transistor, for general purpose amplifier and low speed switching applications, 100V, 8A | FAIR | TO-252 | 3 | -65°C | 150°C | 137K | | 27. | MJD122T4 | NPN darlington transistor for high DC current gain, 100V, 5A | STM | TO-252 | 3 | -65°C | 150°C | 91K | | 28. | MJD127 | PNP transistor, for general purpose amplifier and low speed switching applications, 100V, 8A | FAIR | TO-252 | 3 | -65°C | 150°C | 137K | | 29. | MJD127 | PNP transistor, 100V, 8A | SMSNG | D-PAK | 3 | -65°C | 150°C | 194K | | 30. | MJD127 | PNP darlington transistor for high DC current gain, 100V, 8A | SMSNG | TO-252 | 3 | -65°C | 150°C | 194K | | 31. | MJD127-1 | PNP transistor, for general purpose amplifier and low speed switching applications, 100V, 8A | FAIR | TO-251 | 3 | -65°C | 150°C | 137K | | 32. | MJD127-1 | PNP transistor, 100V, 8A | SMSNG | IPAK | 3 | -65°C | 150°C | 194K | | 33. | MJD127-1 | PNP darlington transistor for high DC current gain, 100V, 8A | SMSNG | TO-251 | 3 | -65°C | 150°C | 194K | | 34. | MJD127-1 | PNP darlington transistor for high DC current gain, 100V, 5A | STM | TO-251 | 3 | -65°C | 150°C | 91K | | 35. | MJD127T4 | PNP transistor, for general purpose amplifier and low speed switching applications, 100V, 8A | FAIR | TO-252 | 3 | -65°C | 150°C | 137K | | 36. | MJD127T4 | PNP darlington transistor for high DC current gain, 100V, 5A | STM | TO-252 | 3 | -65°C | 150°C | 91K | | 37. | PJD1616ACT | 120V; 1A; NPN epitaxial silicon transistor | PROMX | - | 3 | -20°C | 85°C | 220K | | 38. | PJD1616ACX | 120V; 1A; NPN epitaxial silicon transistor | PROMX | SOT-23 | 3 | -20°C | 85°C | 220K | | 39. | PJD1616CCT | 120V; 0.5A; NPN epitaxial silicon transistor | PROMX | - | 3 | -20°C | 85°C | 953K | | 40. | PJD1616CCX | 120V; 0.5A; NPN epitaxial silicon transistor | PROMX | SOT-23 | 3 | -20°C | 85°C | 953K |
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