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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 61. | 1.5FMCJ300 | Surface mount transient voltage suppressor (TVS). 1500W peak power, 5.0W steady state. Breakdown voltage 270V(min), 330V(max). For bidirectional use C or CA suffix. | RECTR | DO-214AB | 2 | -65°C | 175°C | 1M |
| 62. | 1.5FMCJ300A | Surface mount transient voltage suppressor (TVS). 1500W peak power, 5.0W steady state. Breakdown voltage 285V(min), 315V(max). For bidirectional use C or CA suffix. | RECTR | DO-214AB | 2 | -65°C | 175°C | 1M |
| 63. | 1.5FMCJ30A | Surface mount transient voltage suppressor (TVS). 1500W peak power, 5.0W steady state. Breakdown voltage 28.5V(min), 31.5V(max). For bidirectional use C or CA suffix. | RECTR | DO-214AB | 2 | -65°C | 175°C | 1M |
| 64. | J304 | N-Channel silicon junction field-effect transistor | IFET | TO-226AA | 3 | - | - | 95K |
| 65. | J305 | N-Channel silicon junction field-effect transistor | IFET | TO-226AA | 3 | - | - | 95K |
| 66. | J308 | N-Channel silicon junction field-effect transistor | IFET | TO-226AA | 3 | - | - | 94K |
| 67. | J309 | N-Channel silicon junction field-effect transistor | IFET | TO-226AA | 3 | - | - | 94K |
| 68. | MTSMJ302AG-UO | Surface mount LED lamp. Color red-orange. Lens color water clear. Luminous intensity(mcd): 212.0(min), 354.0(typ) @20mA. Peak wavelength 621 nm. | MRKTE | Gull-wing | 2 | - | - | 14K |
| 69. | MTSMJ302AZ-UO | Surface mount LED lamp. Color red-orange. Lens color water clear. Luminous intensity(mcd): 212.0(min), 354.0(typ). Peak wavelength 621 nm. | MRKTE | Z-Bend | 2 | - | - | 64K |
| 70. | P4FMAJ300 | GPP transient voltage suppressor. Breakdown voltage 270V to 330V. 400W peak power, 1.0W steady stat. For bidirectional use C or CA suffixs (ex. P4FMAJ6.8C, P4FMAJ400CA) | RECTR | DO-214AC | 2 | -65°C | 175°C | 1M |
| 71. | P4FMAJ300A | GPP transient voltage suppressor. Breakdown voltage 285V to 315V. 400W peak power, 1.0W steady stat. For bidirectional use C or CA suffixs (ex. P4FMAJ6.8C, P4FMAJ400CA) | RECTR | DO-214AC | 2 | -65°C | 175°C | 1M |
| 72. | P4FMAJ30A | GPP transient voltage suppressor. Breakdown voltage 28.5V to 31.5V. 400W peak power, 1.0W steady stat. For bidirectional use C or CA suffixs (ex. P4FMAJ6.8C, P4FMAJ400CA) | RECTR | DO-214AC | 2 | -65°C | 175°C | 1M |
| 73. | P6FMBJ300 | GPP transient voltage suppressor. Breakdown voltage 270V to 330V. 600W peak power, 1.0W steady stat. For bidirectional use C suffix | RECTR | DO-214AA | 2 | -55°C | 150°C | 1M |
| 74. | P6FMBJ300A | GPP transient voltage suppressor. Breakdown voltage 285V to 315V. 600W peak power, 1.0W steady stat. For bidirectional use CA suffix | RECTR | DO-214AA | 2 | -55°C | 150°C | 1M |
| 75. | P6FMBJ30A | GPP transient voltage suppressor. Breakdown voltage 26.5V to 31.5V. 600W peak power, 1.0W steady stat. For bidirectional use CA suffix | RECTR | DO-214AA | 2 | -55°C | 150°C | 1M |
| 76. | SMPJ304 | N-Channel silicon junction field-effect transistor | IFET | SMD | 3 | - | - | 95K |
| 77. | SMPJ305 | N-Channel silicon junction field-effect transistor | IFET | SMD | 3 | - | - | 95K |
| 78. | SMPJ308 | N-Channel silicon junction field-effect transistor | IFET | SMD | 3 | - | - | 94K |
| 79. | SMPJ309 | N-Channel silicon junction field-effect transistor | IFET | SMD | 3 | - | - | 94K |
| 80. | TFMAJ30A | GPP transient voltage suppressor. Breakdown voltage 33.3V to 36.8V. 400W peak power, 1.0W steady state. For bidirectional use CA suffix. | RECTR | DO-214AC | 2 | -55°C | 150°C | 989K |
