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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. | MI-J2NIA | Input voltage:28V; outputV:18.5V; 10W; military DC-DC converter. For military applications utilizing distributed power architectures | VICOR | - | 9 | -40°C | 100°C | 86K |
| 2. | MI-J2NIY | Input voltage:28V; outputV:18.5V; 50W; 10A; military DC-DC converter. For military applications utilizing distributed power architectures | VICOR | - | 9 | -40°C | 100°C | 86K |
| 3. | MI-J2NIZ | Input voltage:28V; outputV:18.5V; 25W; 5A; military DC-DC converter. For military applications utilizing distributed power architectures | VICOR | - | 9 | -40°C | 100°C | 86K |
| 4. | MI-J2NMA | Input voltage:28V; outputV:18.5V; 10W; military DC-DC converter. For military applications utilizing distributed power architectures | VICOR | - | 9 | -55°C | 100°C | 86K |
| 5. | MI-J2NMY | Input voltage:28V; outputV:18.5V; 50W; 10A; military DC-DC converter. For military applications utilizing distributed power architectures | VICOR | - | 9 | -55°C | 100°C | 86K |
| 6. | MI-J2NMZ | Input voltage:28V; outputV:18.5V; 25W; 5A; military DC-DC converter. For military applications utilizing distributed power architectures | VICOR | - | 9 | -55°C | 100°C | 86K |
| 7. | PJ2N3904CT | 60V; 200mA NPN epitaxial silicon transistor | PROMX | - | 3 | -20°C | 85°C | 340K |
| 8. | PJ2N3904CX | 60V; 200mA NPN epitaxial silicon transistor | PROMX | SOT-23 | 3 | -20°C | 85°C | 340K |
| 9. | PJ2N3906CT | 40V; 200mA PNP epitaxial silicon transistor | PROMX | - | 3 | -20°C | 85°C | 192K |
| 10. | PJ2N3906CX | 40V; 200mA PNP epitaxial silicon transistor | PROMX | SOT-23 | 3 | -20°C | 85°C | 192K |
| 11. | PJ2N5401CT | 130V; 600mA PNP epitaxial silicon transistor | PROMX | - | 3 | -20°C | 85°C | 191K |
| 12. | PJ2N5551CT | 180V; 600mA NPN epitaxial silicon transistor | PROMX | - | 3 | -20°C | 85°C | 190K |
| 13. | PJ2N9012CT | 40V; 500mA PNP epitaxial silicon transistor | PROMX | - | 3 | -20°C | 85°C | 199K |
| 14. | PJ2N9012CX | 40V; 500mA PNP epitaxial silicon transistor | PROMX | SOT-23 | 3 | -20°C | 85°C | 199K |
| 15. | PJ2N9013CT | 40V; 500mA NPN epitaxial silicon transistor | PROMX | - | 3 | -20°C | 85°C | 160K |
| 16. | PJ2N9013CX | 40V; 500mA NPN epitaxial silicon transistor | PROMX | SOT-23 | 3 | -20°C | 85°C | 160K |
| 17. | PJ2N9014CT | 50V; 100mA NPN epitaxial silicon transistor | PROMX | - | 3 | -20°C | 85°C | 102K |
| 18. | PJ2N9014CX | 50V; 100mA NPN epitaxial silicon transistor | PROMX | SOT-23 | 3 | -20°C | 85°C | 102K |
| 19. | PJ2N9015CT | 50V; 100mA PNP epitaxial silicon transistor | PROMX | - | 3 | -20°C | 85°C | 188K |
| 20. | PJ2N9015CX | 50V; 100mA PNP epitaxial silicon transistor | PROMX | SOT-23 | 3 | -20°C | 85°C | 188K |
