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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 21. | 1.5FMCJ250 | Surface mount transient voltage suppressor (TVS). 1500W peak power, 5.0W steady state. Breakdown voltage 225V(min), 275V(max). For bidirectional use C or CA suffix. | RECTR | DO-214AB | 2 | -65°C | 175°C | 1M |
| 22. | 1.5FMCJ250A | Surface mount transient voltage suppressor (TVS). 1500W peak power, 5.0W steady state. Breakdown voltage 237V(min), 263V(max). For bidirectional use C or CA suffix. | RECTR | DO-214AB | 2 | -65°C | 175°C | 1M |
| 23. | MCM6205DJ25R2 | 32K X 9 bit fast static RAM | MOT | SOJ | 32 | 0°C | 70°C | 143K |
| 24. | MCM6206BBEJ25R | 32K X 8 bit fast static RAM | MOT | SOJ | 28 | 0°C | 70°C | 108K |
| 25. | MCM6206DJ25R2 | 32K X 8 bit fast static RAM | MOT | SOJ | 28 | 0°C | 70°C | 162K |
| 26. | MCM6209CJ25R2 | 64K X 4 fast static RAM | MOT | SOJ | 28 | 0°C | 70°C | 175K |
| 27. | MCM6209CJ25R2 | 64K X 4 fast static RAM | MOT | SOJ | 28 | 0°C | 70°C | 175K |
| 28. | MCM6226BBEJ25R2 | 128K X 8 bit static random access memory | MOT | SOJ | 32 | 0°C | 70°C | 156K |
| 29. | MCM6226BBXJ25R2 | 128K X 8 bit static random access memory | MOT | SOJ | 32 | 0°C | 70°C | 156K |
| 30. | MCM6227AWJ25R2 | 1M X 1 bit static random access memory | MOT | SOJ | 28 | 0°C | 70°C | 210K |
| 31. | MCM6227BJ25R2 | 1M X 1 bit static random access memory | MOT | SOJ | 28 | 0°C | 70°C | 147K |
| 32. | MCM6227BJ25R2 | 1M X 1 bit static random access memory | MOT | SOJ | 28 | 0°C | 70°C | 147K |
| 33. | MCM6227BWJ25R2 | 1M X 1 bit static random access memory | MOT | SOJ | 28 | 0°C | 70°C | 147K |
| 34. | MJ2500 | 60V silicon epitaxial-base darlington | COMST | TO-3 | 2 | - | - | 153K |
| 35. | MJ2500 | Medium-power complementary silicon transistor | MOT | TO-204AA | 3 | -55°C | 200°C | 132K |
| 36. | MJ2501 | 80V silicon epitaxial-base darlington | COMST | TO-3 | 2 | - | - | 153K |
| 37. | MJ2501 | Medium-power complementary silicon transistor | MOT | TO-204AA | 3 | -55°C | 200°C | 132K |
| 38. | P4FMAJ250 | GPP transient voltage suppressor. Breakdown voltage 225V to 275V. 400W peak power, 1.0W steady stat. For bidirectional use C or CA suffixs (ex. P4FMAJ6.8C, P4FMAJ400CA) | RECTR | DO-214AC | 2 | -65°C | 175°C | 1M |
| 39. | P4FMAJ250A | GPP transient voltage suppressor. Breakdown voltage 237V to 263V. 400W peak power, 1.0W steady stat. For bidirectional use C or CA suffixs (ex. P4FMAJ6.8C, P4FMAJ400CA) | RECTR | DO-214AC | 2 | -65°C | 175°C | 1M |
| 40. | SML80J25F | 800V Vdss N-Channel+Fred FET (field effect transistor) | SAMEL | SOT227 | - | - | - | 24K |
