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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 181. | 1.5FMCJ110 | Surface mount transient voltage suppressor (TVS). 1500W peak power, 5.0W steady state. Breakdown voltage 99.0V(min), 121V(max). For bidirectional use C or CA suffix. | RECTR | DO-214AB | 2 | -65°C | 175°C | 1M |
| 182. | 1.5FMCJ110A | Surface mount transient voltage suppressor (TVS). 1500W peak power, 5.0W steady state. Breakdown voltage 105V(min), 116V(max). For bidirectional use C or CA suffix. | RECTR | DO-214AB | 2 | -65°C | 175°C | 1M |
| 183. | 1.5FMCJ11A | Surface mount transient voltage suppressor (TVS). 1500W peak power, 5.0W steady state. Breakdown voltage 10.5V(min), 11.6V(max). For bidirectional use C or CA suffix. | RECTR | DO-214AB | 2 | -65°C | 175°C | 1M |
| 184. | J112 | N-Channel silicon junction field-effect transistor | IFET | TO-226AA | 3 | - | - | 93K |
| 185. | J113 | N-Channel silicon junction field-effect transistor | IFET | TO-226AA | 3 | - | - | 93K |
| 186. | P4FMAJ110 | GPP transient voltage suppressor. Breakdown voltage 99.0V to 121V. 400W peak power, 1.0W steady stat. For bidirectional use C or CA suffixs (ex. P4FMAJ6.8C, P4FMAJ400CA) | RECTR | DO-214AC | 2 | -65°C | 175°C | 1M |
| 187. | P4FMAJ110A | GPP transient voltage suppressor. Breakdown voltage 105V to 116V. 400W peak power, 1.0W steady stat. For bidirectional use C or CA suffixs (ex. P4FMAJ6.8C, P4FMAJ400CA) | RECTR | DO-214AC | 2 | -65°C | 175°C | 1M |
| 188. | P4FMAJ11A | GPP transient voltage suppressor. Breakdown voltage 10.5V to 11.6V. 400W peak power, 1.0W steady stat. For bidirectional use C or CA suffixs (ex. P4FMAJ6.8C, P4FMAJ400CA) | RECTR | DO-214AC | 2 | -65°C | 175°C | 1M |
| 189. | P6FMBJ110 | GPP transient voltage suppressor. Breakdown voltage 99.0V to 121V. 600W peak power, 1.0W steady stat. For bidirectional use C suffix | RECTR | DO-214AA | 2 | -55°C | 150°C | 1M |
| 190. | P6FMBJ110A | GPP transient voltage suppressor. Breakdown voltage 105V to 116V. 600W peak power, 1.0W steady stat. For bidirectional use CA suffix | RECTR | DO-214AA | 2 | -55°C | 150°C | 1M |
| 191. | SMPJ111 | N-Channel silicon junction field-effect transistor | IFET | SMD | 3 | - | - | 93K |
| 192. | SMPJ112 | N-Channel silicon junction field-effect transistor | IFET | SMD | 3 | - | - | 93K |
| 193. | SMPJ113 | N-Channel silicon junction field-effect transistor | IFET | SMD | 3 | - | - | 93K |
| 194. | TFMAJ110 | GPP transient voltage suppressor. Breakdown voltage 122V to 149V. 400W peak power, 1.0W steady state. For bidirectional use C suffix. | RECTR | DO-214AC | 2 | -55°C | 150°C | 989K |
| 195. | TFMAJ110A | GPP transient voltage suppressor. Breakdown voltage 122V to 135V. 400W peak power, 1.0W steady state. For bidirectional use CA suffix. | RECTR | DO-214AC | 2 | -55°C | 150°C | 989K |
| 196. | TFMAJ11A | GPP transient voltage suppressor. Breakdown voltage 12.2V to 13.5V. 400W peak power, 1.0W steady state. For bidirectional use CA suffix. | RECTR | DO-214AC | 2 | -55°C | 150°C | 989K |
| 197. | TFMBJ110 | GPP transient voltage suppressor. Breakdown voltage 122V to 149V. 600W peak power, 1.0W steady state. For bidirectional use C suffix. | RECTR | DO-214AA | 2 | -55°C | 150°C | -- |
| 198. | TFMBJ110A | GPP transient voltage suppressor. Breakdown voltage 122V to 135V. 600W peak power, 1.0W steady state. For bidirectional use CA suffix. | RECTR | DO-214AA | 2 | -55°C | 150°C | -- |
| 199. | TFMBJ11A | GPP transient voltage suppressor. Breakdown voltage 12.2V to 13.5V. 600W peak power, 1.0W steady state. For bidirectional use CA suffix. | RECTR | DO-214AA | 2 | -55°C | 150°C | -- |
| 200. | TFMCJ11A | GPP transient voltage suppressor. Breakdown voltage 12.2V to 13.5V. 1500W peak power, 1.0W steady state. For bidirectional use CA suffix. | RECTR | DO-214AB | 2 | -55°C | 150°C | -- |
