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Found: 42      Displaying: 21 - 40
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
21.
IRG4PC50UDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.65V @ VGE = 15V, IC = 27A
IRF
TO-247AC
3
-55°C
150°C
213K
22.
IRG4PC50WInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.3V @ VGE = 15V, IC = 27A
IRF
TO-247AC
3
-55°C
150°C
157K
23.
IRG4PH20KInsulated gate bipolar transistor. VCES = 1200V, VCE(on)typ. = 3.17V @ VGE = 15V, IC = 5.0A
IRF
TO-247AC
3
-55°C
150°C
229K
24.
IRG4PH20KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 3.17V @ VGE = 15V, IC = 5.0A
IRF
TO-247AC
3
-55°C
150°C
276K
25.
IRG4PH30KInsulated gate bipolar transistor. VCES = 1200V, VCE(on)typ. = 3.10V @ VGE = 15V, IC = 10A
IRF
TO-247AC
3
-55°C
150°C
161K
26.
IRG4PH30KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 3.10V @ VGE = 15V, IC = 10A
IRF
TO-247AC
3
-55°C
150°C
212K
27.
IRG4PH30KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 3.10V @ VGE = 15V, IC = 10A
IRF
TO-247AC
3
-55°C
150°C
212K
28.
IRG4PH40KInsulated gate bipolar transistor. VCES = 1200V, VCE(on)typ. = 2.74V @ VGE = 15V, IC = 15A
IRF
TO-247AC
3
-55°C
150°C
157K
29.
IRG4PH40KInsulated gate bipolar transistor. VCES = 1200V, VCE(on)typ. = 2.74V @ VGE = 15V, IC = 15A
IRF
TO-247AC
3
-55°C
150°C
157K
30.
IRG4PH40KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 2.74V @ VGE = 15V, IC = 15A
IRF
TO-247AC
3
-55°C
150°C
217K
31.
IRG4PH40UInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 2.43V @ VGE = 15V, IC = 21A
IRF
TO-247AC
3
-55°C
150°C
163K
32.
IRG4PH40UDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 2.43V @ VGE = 15V, IC = 21A
IRF
TO-247AC
3
-55°C
150°C
220K
33.
IRG4PH50KInsulated gate bipolar transistor. VCES = 1200V, VCE(on)typ. = 2.77V @ VGE = 15V, IC = 24A
IRF
TO-247AC
3
-55°C
150°C
92K
34.
IRG4PH50KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 2.77V @ VGE = 15V, IC = 24A
IRF
TO-247AC
3
-55°C
150°C
224K
35.
IRG4PH50SInsulated gate bipolar transistor. VCES = 1200V, VCE(on)typ. = 1.47V @ VGE = 15V, IC = 33A
IRF
TO-247AC
3
-55°C
150°C
130K
36.
IRG4PH50UInsulated gate bipolar transistor. VCES = 1200V, VCE(on)typ. = 2.78V @ VGE = 15V, IC = 24A
IRF
TO-247AC
3
-55°C
150°C
134K
37.
IRG4PH50UDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 2.78V @ VGE = 15V, IC = 24A
IRF
TO-247AC
3
-55°C
150°C
229K
38.
IRG4PSC71KInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.83V @ VGE = 15V, IC = 60A
IRF
SUPER-247
3
-55°C
150°C
152K
39.
IRG4PSC71KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.83V @ VGE = 15V, IC = 60A
IRF
SUPER-247
3
-55°C
150°C
196K
40.
IRG4PSC71UInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.67V @ VGE = 15V, IC = 60A
IRF
SUPER-247
3
-55°C
150°C
151K
1 2 3


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