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Found: 105      Displaying: 101 - 105
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
101.
IRG4RC10UInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.15V @ VGE = 15V, IC = 5.0A
IRF
TO-252AA
3
-55°C
150°C
131K
102.
IRG4RC10UDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.15V @ VGE = 15V, IC = 5.0A, tf(typ) = 140ns.
IRF
TO-252AA
3
-55°C
150°C
191K
103.
IRG4RC10UDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.15V @ VGE = 15V, IC = 5.0A, tf(typ) = 140ns.
IRF
D-PAK
3
-55°C
150°C
191K
104.
IRG4RC20FInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.82V @ VGE = 15V, IC = 12A
IRF
D-PAK
3
-55°C
150°C
264K
105.
IRG4RC20FInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.82V @ VGE = 15V, IC = 12A
IRF
TO-252AA
3
-55°C
150°C
264K
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