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Found: 105      Displaying: 41 - 60
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
41.
IRG4BC30WInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.70V @ VGE = 15V, IC = 12A
IRF
-
3
-55°C
150°C
139K
42.
IRG4BC30W-SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.10V @ VGE = 15V, IC = 12A
IRF
DDPak
3
-55°C
150°C
188K
43.
IRG4BC40Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.50V @ VGE = 15V, IC = 27A
IRF
-
3
-55°C
150°C
167K
44.
IRG4BC40KInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.1V @ VGE = 15V, IC = 25A
IRF
-
3
-55°C
150°C
156K
45.
IRG4BC40SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.32V @ VGE = 15V, IC = 31A
IRF
-
3
-55°C
150°C
157K
46.
IRG4BC40UInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.72V @ VGE = 15V, IC = 20A
IRF
-
3
-55°C
150°C
169K
47.
IRG4BC40UInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.72V @ VGE = 15V, IC = 20A
IRF
-
3
-55°C
150°C
169K
48.
IRG4BC40WInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.05V @ VGE = 15V, IC = 20A
IRF
-
3
-55°C
150°C
129K
49.
IRG4PC30Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.59V @ VGE = 15V, IC = 17A
IRF
TO-247AC
3
-55°C
150°C
145K
50.
IRG4PC30FDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.59V @ VGE = 15V, IC = 17A
IRF
TO-247AC
3
-55°C
150°C
210K
51.
IRG4PC30KInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A
IRF
TO-247AC
3
-55°C
150°C
121K
52.
IRG4PC30KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A
IRF
TO-247AC
3
-55°C
150°C
178K
53.
IRG4PC30KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A
IRF
TO-247AC
3
-55°C
150°C
178K
54.
IRG4PC30SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 18A
IRF
TO-247AC
3
-55°C
150°C
120K
55.
IRG4PC30UInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.95V @ VGE = 15V, IC = 12A
IRF
TO-247AC
3
-55°C
150°C
145K
56.
IRG4PC30UDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.95V @ VGE = 15V, IC = 12A
IRF
TO-247AC
3
-55°C
150°C
211K
57.
IRG4PC30WInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.70V @ VGE = 15V, IC = 12A
IRF
TO-247AC
3
-55°C
150°C
123K
58.
IRG4PC40Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.50V @ VGE = 15V, IC = 27A
IRF
TO-247AC
3
-55°C
150°C
145K
59.
IRG4PC40FDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.50V @ VGE = 15V, IC = 27A
IRF
TO-247AC
3
-55°C
150°C
214K
60.
IRG4PC40KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.1V @ VGE = 15V, IC = 25A
IRF
TO-247AC
3
-55°C
150°C
182K
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